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Acta Physica Sinica (Overseas Edition), 1997, Vol. 6(11): 848-860    DOI: 10.1088/1004-423X/6/11/007
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

EFFECTIVE-MASS THEORY FOR InAs/GaAs STRAINED SUPERLATTICES

LI SHU-SHEN (李树深), XIA JIAN-BAI (夏建白)
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
Abstract  By using the recently developed exact effective-mass envelope function theory, the electronic structures of InAs/GaAs strained superlattices grown on GaAs (100) oriented substrates are studied. The electron and hole subband structures, distribution of electrons and holes along the growth direction, optical transition matrix elements, exciton states, and absorption spectra are calculated. In our calculations, the effects due to the different effective masses of electrons and holes in different materials and the strain are included. Our theoretical results are in agreement with the available experimental data.
Received:  28 March 1997      Accepted manuscript online: 
PACS:  71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)  
  73.20.At (Surface states, band structure, electron density of states)  
  73.21.Cd (Superlattices)  
  73.20.Mf (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))  
  68.65.Cd (Superlattices)  
Fund: Project supported by the National Natural Science Foundation of China.

Cite this article: 

LI SHU-SHEN (李树深), XIA JIAN-BAI (夏建白) EFFECTIVE-MASS THEORY FOR InAs/GaAs STRAINED SUPERLATTICES 1997 Acta Physica Sinica (Overseas Edition) 6 848

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