STUDY ON THE OPTICAL PROPERTIES AND HYDROGEN CONTENT OF THE SILICON NITRIDE THIN FILM

doi:10.1088/1004-423X/4/9/008

Abstract

Abstract The Si₃N₄ thin films have been manufactured by electron cyclotron resonance plasma enhanced chemical vapour deposition technology on the KBr and (111) monocrystal Si sub-strates, The infrared optical properties of the Si₃N₄ film have been studied by analysing its IR spectrum. The results show that the Si₃N₄ film can be used as an antireflexion and an-tireflectiug film of Si surface, The H content of Si₃N₄ thin film has been estimated from the infrared absorption area. It is obtained that the H content of the Si₃N₄ film deposited on the KBr substrate is lower than that deposited on Si substrate, and it derceases with increasing deposition temperature. The Raman spectra of the Si₃N₄ film deposited at 360℃ has also been measured.

Received: 17 October 1994
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.66.Nk	(Insulators)
	78.30.Hv	(Other nonmetallic inorganics)
	52.77.Dq	(Plasma-based ion implantation and deposition)
	42.79.Wc	(Optical coatings)

Fund: Project supported by the National Natural Science Foundation of China.

Cite this article:

CHEN JUN-FANG (陈俊芳), REN ZHAO-XING (任兆杏), DING ZHEN-FENG (丁振峰) STUDY ON THE OPTICAL PROPERTIES AND HYDROGEN CONTENT OF THE SILICON NITRIDE THIN FILM 1995 Acta Physica Sinica (Overseas Edition) 4 698

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