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Acta Physica Sinica (Overseas Edition), 1995, Vol. 4(2): 118-124    DOI: 10.1088/1004-423X/4/2/006
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)

XU TIAN-BING (徐天冰)a, ZHU PEI-RAN (朱沛然)a, ZHOU JUN-SI (周俊思)a, LI DAI-QING (李岱青)b, REN TING-QI (任廷琦)b, ZHAO QING-TAI (赵清太)c, LIU XIANG-DONG (刘向东)d, LIU JIE-TIAN (刘洁田)d
a Institute of Physics, Academy Sinica, Beijing 100080, China; b Department of Physics, Yantai Teachers College, Yantai 264025, China; c Institute of Microelectronics, Peking University, Beijing 100871, China; d Department of Physics, Shandong University, Jinan 250100, China
Abstract  The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.
Received:  14 February 1994      Accepted manuscript online: 
PACS:  61.80.Jh (Ion radiation effects)  
  61.72.uf (Ge and Si)  
  68.49.Sf (Ion scattering from surfaces (charge transfer, sputtering, SIMS))  
  61.85.+p (Channeling phenomena (blocking, energy loss, etc.) ?)  
  61.43.Dq (Amorphous semiconductors, metals, and alloys)  

Cite this article: 

XU TIAN-BING (徐天冰), ZHU PEI-RAN (朱沛然), ZHOU JUN-SI (周俊思), LI DAI-QING (李岱青), REN TING-QI (任廷琦), ZHAO QING-TAI (赵清太), LIU XIANG-DONG (刘向东), LIU JIE-TIAN (刘洁田) ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100) 1995 Acta Physica Sinica (Overseas Edition) 4 118

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