DEPOSITION OF HIGH QUALITY AMORPHOUS SILICON FILMS WITH STRONG HYDROGEN DILUTED SILANE AS REACTANT GAS SOURCE

doi:10.1088/1004-423X/2/11/002

Abstract

Abstract By using strongly hydrogen diluted silane as a reactant gas source [C(=SiH₄/(SiH₄+H₂))<5%] in a conventional diode PECVD system, we have deposited high quality a-Si:H films which exhibit almost no Steable-Wronski (S-W) effect, The [H] radical in rf plasma erodes the growing surface and eliminates the weak Si-Si bonds, thus re-ducing the density of metastable defects of a-Si:H films and causing the amorphous network to be more perfect. Our results show that as C value decreases from 5.4 % to 0.8 %, the peak location of TO mode in Raman spectra changes from 480 to 500 cm^-1, the average distortion of bond angles $\Delta\theta$, which is calculated from the width of half full height of TO peaks, reduces from 9.0° to 3.8°. The hydrogen content C_H of the samples which show almost no S-W effect is less than 10at%.

Received: 15 October 1992
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.05.Cy	(Elemental semiconductors)
	81.05.Gc	(Amorphous semiconductors)
	78.30.Am	(Elemental semiconductors and insulators)
	78.66.Db	(Elemental semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China.

Cite this article:

HE YU-LIANG (何宇亮), LIU XIANG-NA (刘湘娜), YIN CHENG-ZHONG (殷晨钟), ZHANG YU (张昱) DEPOSITION OF HIGH QUALITY AMORPHOUS SILICON FILMS WITH STRONG HYDROGEN DILUTED SILANE AS REACTANT GAS SOURCE 1993 Acta Physica Sinica (Overseas Edition) 2 807

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DEPOSITION OF HIGH QUALITY AMORPHOUS SILICON FILMS WITH STRONG HYDROGEN DILUTED SILANE AS REACTANT GAS SOURCE

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