Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals

doi:10.1088/1674-1056/ab942d

Abstract

High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe:β-Ga₂O₃ single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe:β-Ga₂O₃ single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe:β-Ga₂O₃ crystal reached to 3.63×10¹¹ Ω·cm. The high resistivity Fe:β-Ga₂O₃ single crystals could be applied as the substrate for the high-power field effect transistors (FETs).

Keywords: Fe:β-Ga₂O₃ crystal high resistivity crystal growth

Received: 20 April 2020
Revised: 10 May 2020
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	71.20.Nr	(Semiconductor compounds)
	78.20.-e	(Optical properties of bulk materials and thin films)
	65.40.-b	(Thermal properties of crystalline solids)

Fund:

Project supported by the Scientific and Innovative Action Plan of Shanghai, China (Grant No. 18511110502) and Equipment Pre-research Fund Key Project, China (Grant No. 6140922010601).

Corresponding Authors: Hui-Li Tang
E-mail: tanghl@tongji.edu.cn

Cite this article:

Hao Zhang(张浩), Hui-Li Tang(唐慧丽), Nuo-Tian He(何诺天), Zhi-Chao Zhu(朱智超), Jia-Wen Chen(陈佳文), Bo Liu(刘波), Jun Xu(徐军) Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals 2020 Chin. Phys. B 29 087201

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Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals

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Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals