Chin. Phys. B
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Chin. Phys. B  2019, Vol. 28 Issue (11): 118102    DOI: 10.1088/1674-1056/ab4d49
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Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
Jing Zhang(张静)1,2, Hong-Liang Lv(吕红亮)1, Hai-Qiao Ni(倪海桥)2, Shi-Zheng Yang(杨施政)1, Xiao-Ran Cui(崔晓然)1,2, Zhi-Chuan Niu(牛智川)2, Yi-Men Zhang(张义门)1, Yu-Ming Zhang(张玉明)1
1 School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 710071, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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