Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties

doi:10.1088/1674-1056/27/3/037302

Abstract Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques. Samples cut from the head (T04) and tail (W02) regions of a crystal ingot show distinct differences in Te inclusion distribution. Obvious difference is not observed in Fourier transform infrared (FTIR) spectra, UV-Vis-NIR transmittance spectra, and I-V measurements. However, carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current (LBIC) measurements. Low temperature photoluminescence (PL) measurement presents sharp emission peaks of D⁰X and A⁰X, and relatively large peak of D⁰X (or A⁰X)/D_complex for T04, indicating a better crystalline quality. Thermally stimulated current (TSC) spectrum shows higher density of shallow point defects, i.e., Cd vacancies, In_Cd⁺, etc., in W02 sample, which could be responsible for the deterioration of electron mobility.

Keywords: defects Te inclusions semiconducting II-VI materials CdZnTe

Received: 05 December 2017
Revised: 28 December 2017
Accepted manuscript online:

PACS:	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.61.Ga	(II-VI semiconductors)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)

Fund: Project supported by the National Natural Science Foundations of China (Grant Nos. 51502244, 51702271, U1631116, and 51372205), the National Key Research and Development Program of China (Grant Nos. 2016YFF0101301 and 2016YFE0115200), the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University, China (Grant No. SKLSP201741) the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2016KJXX-09), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015BJ(II)ZS014).

Corresponding Authors: Wan-Qi Jie
E-mail: jwq@nwpu.edu.cn

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Xu Fu(符旭), Fang-Bao Wang(王方宝), Xi-Ran Zuo(左希然), Ze-Jian Wang(王泽剑), Qian-Ru Wang(王倩茹), Ke-Qin Wang(王柯钦), Ling-Yan Xu(徐凌燕), Ya-Dong Xu(徐亚东), Rong-Rong Guo(郭榕榕), Hui Yu(于晖), Wan-Qi Jie(介万奇) Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties 2018 Chin. Phys. B 27 037302

[1]	Schlesinger T E, Toney J E, Yoon H, Lee E Y, Brunett B A, Franks L and James R B 2001 Mater. Sci. Eng. R 32 103
[2]	James R B, Brunett B, Heffelfinger J, Scyoc J V, Lund J, Doty F P, Lingren C L, Olsen R, Cross E and Hermon H 1998 J. Electron. Mater. 27 788
[3]	Eisen Y and Shor A 1998 J. Cryst. Growth 184 1302
[4]	Rudolph P 2010 Defect Formation During Crystal Growth from the Melt (Heidelberg:Springer Berlin Heidelberg) pp. 159-201
[5]	Fiederle M, Fauler A, Konrath J and Babentsov V 2004 IEEE T. Nucl. Sci. 51 1864
[6]	Fiederle M, Eiche C, Salk M, Schwarz R, Benz K W, Stadler W, Hofmann D M and Meyer B K 1998 J. Appl. Phys. 84 6689
[7]	Rudolph P, Engel A, Schentke I and Grochocki A 1995 J. Cryst. Growth 147 297
[8]	Barz R U and Gille P 1995 J. Cryst. Growth 149 196
[9]	Castaldini A, Cavallini A, Fraboni B, Fernandez P and Piqueras J 1996 J. Appl. Phys. 83 2121
[10]	Zha G, Yang J, Xu L, Feng T, Wang N and Jie W 2014 J. Appl. Phys. 115 103
[11]	Gu Y, Rong C, Xu Y, Shen H, Zha G, Wang N, Lv H, Li X, Wei D and Jie W 2015 Nucl. Instrum. Methods 343 89
[12]	Fu X, Xu Y, Xu L, Gu Y, Jia N, Bai W, Zha G, Wang T and Jie W 2016 Crystengcomm 18 5667
[13]	Rudolph P, Neubert M and Uhlberg M M 1993 J. Cryst. Growth 128 582
[14]	Yang G, Bolotnikov A E, Fochuk P M, Camarda G S, Hossain A, Roy U N, Cui Y, Pinder R, Gray J and James R B 2014 Phys. Status Solidi 11 1328
[15]	Li G Q, Jie W Q, Gu Z and Hua H 2003 Chin. Phys. Lett. 20 1600
[16]	Xu L, Jie W, Fu X, Zha G, Feng T, Guo R, Wang T, Xu Y and Zaman Y 2014 Nucl. Instrum. Methods 767 318
[17]	Castaldini A, Cavallini A, Fraboni B, Fernandez P and Piqueras J 1996 Appl. Phys. Lett. 69 3510
[18]	Kim M D, Kang T W, Kim G H, Han M S, Cho H D, Kim J M, Jeoung Y T and Kim T W 1993 J. Appl. Phys. 73 4074
[19]	Seto S, Tanaka A, Masa Y and Dairaku S 1988 Appl. Phys. Lett. 53 1524
[20]	Jain S 2001 Photoluminescence Study of Cadmium Zinc Telluride (MS dissertation) (Morgantown:West Virginia University)
[21]	Worschech L, Ossau W and Landwehr G 1995 Phys. Rev. B 81 13965
[22]	Halliday D P, Potter M D G, Mullins J T and Brinkman A W 2000 J. Cryst. Growth 220 30
[23]	Suzuki K, Inagaki K, Seto S, Tsubono I, Kimura N, Sawada T and Imai K 1996 J. Cryst. Growth 159 388
[24]	Pavlovic M, Desnica U V and Gladic J 2000 J. Appl. Phys. 88 4563
[25]	Pavlovic M, Jaksic M, Zorc H and Medunic Z 2008 J. Appl. Phys. 104 8177
[26]	Soundararajan R and Lynn K G 2012 J. Appl. Phys. 112 431
[27]	Lee E Y, James R B, Olsen R W and Hermon H 1999 J. Electron. Mater. 28 766
[28]	Wei S H and Zhang S B 2014 Phys. Rev. B 66 155211
[29]	Carvalho A, Tagantsev A K, Öberg S, Briddon P R and Setter N 2010 Phys. Rev. B 81 075215
[30]	Yu P, Jie W and Tao W 2011 J. Mater. Sci. 46 3749

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Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties

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