Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (1): 018501    DOI: 10.1088/1674-1056/26/1/018501
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Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯)
Northwest Institute of Nuclear Technology, Xi'an 710024, China

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