Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (6): 068103    DOI: 10.1088/1674-1056/25/6/068103
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华)
Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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