Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (3): 038501    DOI: 10.1088/1674-1056/25/3/038501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强)
School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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