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CN 11-5639/O4
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Other articles related with "85.30.Pq":
58503 Sheng Sun, Yuzhi Li, Shengdong Zhang
  High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors
    Chin. Phys. B   2020 Vol.29 (5): 58503-058503 [Abstract] (53) [HTML 1 KB] [PDF 757 KB] (48)
67302 Yan Liu, Wei Chen, Chaohui He, Chunlei Su, Chenhui Wang, Xiaoming Jin, Junlin Li, Yuanyuan Xue
  Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons
    Chin. Phys. B   2019 Vol.28 (6): 67302-067302 [Abstract] (115) [HTML 1 KB] [PDF 1403 KB] (87)
68503 Jia-Nan Wei, Chao-Hui He, Pei Li, Yong-Hong Li
  Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD
    Chin. Phys. B   2019 Vol.28 (6): 68503-068503 [Abstract] (127) [HTML 1 KB] [PDF 1876 KB] (82)
68504 Zheng-Xin Wen, Feng Zhang, Zhan-Wei Shen, Jun Chen, Ya-Wei He, Guo-Guo Yan, Xing-Fang Liu, Wan-Shun Zhao, Lei Wang, Guo-Sheng Sun, Yi-Ping Zeng
  Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
    Chin. Phys. B   2019 Vol.28 (6): 68504-068504 [Abstract] (120) [HTML 1 KB] [PDF 1521 KB] (132)
108501 Jin-Xin Zhang, Hong-Xia Guo, Xiao-Yu Pan, Qi Guo, Feng-Qi Zhang, Juan Feng, Xin Wang, Yin Wei, Xian-Xiang Wu
  Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
    Chin. Phys. B   2018 Vol.27 (10): 108501-108501 [Abstract] (116) [HTML 1 KB] [PDF 1529 KB] (129)
88501 Weizhong Chen, Yao Huang, Lijun He, Zhengsheng Han, Yi Huang
  A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design
    Chin. Phys. B   2018 Vol.27 (8): 88501-088501 [Abstract] (173) [HTML 1 KB] [PDF 800 KB] (127)
88502 Hui Li, Chang-Chun Chai, Yu-Qian Liu, Han Wu, Yin-Tang Yang
  Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves
    Chin. Phys. B   2018 Vol.27 (8): 88502-088502 [Abstract] (154) [HTML 1 KB] [PDF 1160 KB] (137)
36102 Xiao-Long Li, Wu Lu, Xin Wang, Xin Yu, Qi Guo, Jing Sun, Mo-Han Liu, Shuai Yao, Xin-Yu Wei, Cheng-Fa He
  Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
    Chin. Phys. B   2018 Vol.27 (3): 36102-036102 [Abstract] (200) [HTML 0 KB] [PDF 1128 KB] (194)
98502 Ya-Bin Sun, Xiao-Jin Li, Jin-Zhong Zhang, Yan-Ling Shi
  Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout
    Chin. Phys. B   2017 Vol.26 (9): 98502-098502 [Abstract] (370) [HTML 0 KB] [PDF 612 KB] (218)
88502 Jin-Xin Zhang, Chao-Hui He, Hong-Xia Guo, Pei Li, Bao-Long Guo, Xian-Xiang Wu
  Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor
    Chin. Phys. B   2017 Vol.26 (8): 88502-088502 [Abstract] (166) [HTML 1 KB] [PDF 714 KB] (169)
88503 Pei Li, Mo-Han Liu, Chao-Hui He, Hong-Xia Guo, Jin-Xin Zhang, Ting Ma
  An investigation of ionizing radiation damage in different SiGe processes
    Chin. Phys. B   2017 Vol.26 (8): 88503-088503 [Abstract] (167) [HTML 1 KB] [PDF 2300 KB] (272)
38502 Qiao-Qun Yu, Jiang Lu, Hai-Nan Liu, Jia-Jun Luo, Bo Li, Li-Xin Wang, Zheng-Sheng Han
  Superjunction nanoscale partially narrow mesa IGBT towards superior performance
    Chin. Phys. B   2017 Vol.26 (3): 38502-038502 [Abstract] (280) [HTML 0 KB] [PDF 756 KB] (384)
38501 Yan-Xiao Zhao, Wan-Rong Zhang, Xin Huang, Hong-Yun Xie, Dong-Yue Jin, Qiang Fu
  Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
    Chin. Phys. B   2016 Vol.25 (3): 38501-038501 [Abstract] (164) [HTML 0 KB] [PDF 347 KB] (297)
88502 Li Pei, Guo Hong-Xia, Guo Qi, Zhang Jin-Xin, Xiao Yao, Wei Ying, Cui Jiang-Wei, Wen Lin, Liu Mo-Han, Wang Xin
  Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
    Chin. Phys. B   2015 Vol.24 (8): 88502-088502 [Abstract] (257) [HTML 1 KB] [PDF 1147 KB] (305)
68502 Yuan Lei, Zhang Yu-Ming, Song Qing-Wen, Tang Xiao-Yan, Zhang Yi-Men
  Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base
    Chin. Phys. B   2015 Vol.24 (6): 68502-068502 [Abstract] (305) [HTML 1 KB] [PDF 521 KB] (310)
16102 Chen Jian-Jun, Chi Ya-Qing, Liang Bin
  Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes
    Chin. Phys. B   2015 Vol.24 (1): 16102-016102 [Abstract] (208) [HTML 0 KB] [PDF 869 KB] (333)
88504 Zhang Jin-Ping, Li Ze-Hong, Zhang Bo, Li Zhao-Ji
  A novel high performance TFS SJ IGBT with a buried oxide layer
    Chin. Phys. B   2014 Vol.23 (8): 88504-088504 [Abstract] (209) [HTML 1 KB] [PDF 461 KB] (394)
18505 Chen Wei-Zhong, Li Ze-Hong, Zhang Bo, Ren Min, Zhang Jin-Ping, Liu Yong, Li Zhao-Ji
  A snapback suppressed reverse-conducting IGBT with uniform temperature distribution
    Chin. Phys. B   2014 Vol.23 (1): 18505-018505 [Abstract] (145) [HTML 1 KB] [PDF 880 KB] (708)
77309 Fu Qiang, Zhang Bo, Luo Xiao-Rong, Li Zhao-Ji
  A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate
    Chin. Phys. B   2013 Vol.22 (7): 77309-077309 [Abstract] (217) [HTML 1 KB] [PDF 585 KB] (587)
68502 Chai Chang-Chun, Ma Zhen-Yang, Ren Xing-Rong, Yang Yin-Tang, Zhao Ying-Bo, Xin Hai
  Hardening measures for bipolar transistor against microwave-induced damage
    Chin. Phys. B   2013 Vol.22 (6): 68502-068502 [Abstract] (303) [HTML 1 KB] [PDF 1068 KB] (440)
46103 Guo Yang, Chen Jian-Jun, He Yi-Bai, Liang Bin, Liu Bi-Wei
  Dual role of multiple-transistor charge sharing collection in single-event transient
    Chin. Phys. B   2013 Vol.22 (4): 46103-046103 [Abstract] (201) [HTML 1 KB] [PDF 594 KB] (431)
28502 Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Zhao Ying-Bo, Qiao Li-Ping
  Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters
    Chin. Phys. B   2013 Vol.22 (2): 28502-028502 [Abstract] (316) [HTML 1 KB] [PDF 1073 KB] (730)
28503 Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Zhou Chun-Yu, Wang Guan-Yu, Li Yu-Chen
  Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET
    Chin. Phys. B   2013 Vol.22 (2): 28503-028503 [Abstract] (361) [HTML 1 KB] [PDF 390 KB] (1150)
98502 Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Chen Bin, Song Kun, Zhao Ying-Bo
  Microwave damage susceptibility trend of bipolar transistor as a function of frequency
    Chin. Phys. B   2012 Vol.21 (9): 98502-098502 [Abstract] (799) [HTML 1 KB] [PDF 239 KB] (556)
88502 Zhang Qian, Zhang Yu-Ming, Yuan Lei, Zhang Yi-Men, Tang Xiao-Yan, Song Qing-Wen
  Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer
    Chin. Phys. B   2012 Vol.21 (8): 88502-088502 [Abstract] (950) [HTML 1 KB] [PDF 907 KB] (1191)
68504 Zhang Jin-Ping, Li Ze-Hong, Zhang Bo, Li Zhao-Ji
  A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer
    Chin. Phys. B   2012 Vol.21 (6): 68504-068504 [Abstract] (1001) [HTML 1 KB] [PDF 801 KB] (1059)
58502 Ma Zhen-Yang,Chai Chang-Chun,Ren Xing-Rong,Yang Yin-Tang,Chen Bin,Zhao Ying-Bo
  Effects of microwave pulse-width damage on a bipolar transistor
    Chin. Phys. B   2012 Vol.21 (5): 58502-058502 [Abstract] (985) [HTML 1 KB] [PDF 1579 KB] (1266)
16103 Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Deng Ke-Feng
  New insight into the parasitic bipolar amplification effect in single event transient production
    Chin. Phys. B   2012 Vol.21 (1): 16103-016103 [Abstract] (908) [HTML 1 KB] [PDF 702 KB] (684)
108502 Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Li Yu-Chen, Qu Jiang-Tao
  Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
    Chin. Phys. B   2011 Vol.20 (10): 108502-108502 [Abstract] (1014) [HTML 0 KB] [PDF 503 KB] (918)
98501 Xu Xiao-Bo, Xu Kai-Xuan, Zhang He-Ming, Qin Shan-Shan
  A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects
    Chin. Phys. B   2011 Vol.20 (9): 98501-098501 [Abstract] (1081) [HTML 0 KB] [PDF 140 KB] (716)
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