Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells

doi:10.1088/1674-1056/21/10/107304

Abstract The resistive switching properties in amorphous Pr_0.67Sr_0.33MnO₃ films deposited by pulsed laser deposition are investigated. Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr_0.67Sr_0.33MnO₃/F:SnO₂ junctions are obtained at room temperature. Dramatically, the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range. The results allocated those two switching types to areas of different defect densities beneath the same electrode. The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role. An interface-effect-related resistance switching is proposed in an amorphous Pr_0.67Sr_0.33MnO₃-based memory cell.

Keywords: Pr_0.67Sr_0.33MnO₃ thin films resistance switching amorphous metal-oxide interface

Received: 17 February 2012
Revised: 09 March 2012
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.40.Rw	(Metal-insulator-metal structures)
	73.50.Fq	(High-field and nonlinear effects)
	72.20.-i	(Conductivity phenomena in semiconductors and insulators)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976016), the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTUHN), China (Grant No. 2012IRTSTHN004), and the Foundation Co-established by the Province and the Ministry in Henan University, China (Grant No. SBGJ090503).

Corresponding Authors: Zhang Wei-Feng
E-mail: wfzhang@henu.edu.cn

Cite this article:

Zhang Ting (张婷), Bai Ying (白莹), Jia Cai-Hong (贾彩虹), Zhang Wei-Feng (张伟风) Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells 2012 Chin. Phys. B 21 107304

[1]	Garcia V, Fusil S, Bouzehouane K, Enouz-Vedrenne S, Mathur N D, Barthélémy A and Bibes M 2009 Nature 460 81
[2]	Li Y T, Long S B, Lü H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S and Liu M 2011 Chin. Phys. B 20 017305
[3]	Zhang T, Ding L H and Zhang W F 2012 Chin. Phys. B 21 047301
[4]	Liu S Q, Wu N J and Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[5]	Lee W, Jo G, Lee S, Park J, Jo M, Lee J, Jung S, Kim S, Shin J, Park S, Lee T and Hwang H 2011 Appl. Phys. Lett. 98 032105
[6]	Shibuya K, Dittmann R, Mi S and Waser R 2010 Adv. Mater. 22 411
[7]	Muenstermann R, Menke T, Dittmann R and Waser R 2010 Adv. Mater. 22 4819
[8]	Cho S, Park W G, Cho D Y, Berthet P and Oh S J 2010 J. Appl. Phys. 108 103716
[9]	Yu S, Gao B, Dai H B, Sun B, Liu L F, Liu X Y, Han R Q, Kang J F and Yu B 2010 Solid-State Lett. 13 H36
[10]	Jeong H Y, Lee J Y and Choi S Y 2010 Adv. Funct. Mater. 20 3912
[11]	Gao X, Xia Y D, Xu B, Kong J Z, Guo H X, Li K, Li H T, Xu H N, Chen K, Yin J and Liu Z G 2010 J. Appl. Phys. 108 074506
[12]	Jung K, Kim Y, Jung W, Im H, Park B, Hong J, Lee J, Park J and Lee J K 2010 Appl. Phys. Lett. 97 233509
[13]	Sawa A, Fujii T, Kawasaki M and Tokura Y 2004 Appl. Phys. Lett. 85 4073
[14]	Oka T and Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[15]	Janousch M, Meijer G I, Staub U, Delley B, Karg S F and Andreasson B P 2007 Adv. Mater. 19 2232
[16]	Tsui S, Baikalov A, Cmaidalka J, Sun Y Y, Wang Y Q, Xue Y Y, Chu C W, Chen L and Jacobson A J 2004 Appl. Phys. Lett. 85 317
[17]	Seong D, Jo M, Lee D and Hwang H 2007 Solid-State Lett. 10 H168
[18]	Nian Y B, Strozier J, Wu N J, Chen X and Ignatiev A 2007 Phys. Rev. Lett. 98 146403
[19]	Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y and Chu C W 2003 Appl. Phys. Lett. 83 957
[20]	Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632
[21]	Dong R, Xiang W F, Lee D S, Oh S J, Seong D J, Heo S H, Choi H J, Kwon M J, Chang M, Jo M, Hasan M and Hwang H 2007 Appl. Phys. Lett. 90 182118
[22]	Xia Y D, Liu Z G, Wang Y, Shi L, Chen L, Yin J and Meng X K 2007 Appl. Phys. Lett. 91 102904
[23]	Fujii T, Kawasaki M, Sawa A, Kawazoe Y, Akoh H and Tokura Y 2007 Phys. Rev. B 75 165101
[24]	Janousch M, Meijer G I, Staub U, Delley B, Karg S F and Andresson B P 2007 Adv. Mater. 19 2232
[25]	Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R and Williams R S 2008 Nat. Nanotechnol. 3 429
[26]	Szot K, Speier W, Carius R, Zastrow U and Beyer W 2002 Phys. Rev. Lett. 88 075508
[27]	Bernéde J C, Cattin L, Morsli M and Berredjem Y 2008 Sol. Energy Mater. Sol. Cells 92 1508
[28]	Reagor D W, Lee S Y, Li Y and Jia Q X 2004 J. Appl. Phys. 95 7971

[1]	Formation of L1₀-FeNi hard magnetic material from FeNi-based amorphous alloys Yaocen Wang(汪姚岑), Ziyan Hao(郝梓焱), Yan Zhang(张岩), Xiaoyu Liang(梁晓宇), Xiaojun Bai(白晓军), and Chongde Cao(曹崇德). Chin. Phys. B, 2022, 31(4): 046301.
[2]	Magnetic properties and magnetocaloric effect in RE₅₅Co₃₀Al₁₀Si₅ (RE = Er and Tm) amorphous ribbons Hao Sun(孙浩), Junfeng Wang(王俊峰), Lu Tian(田路), Jianjian Gong(巩建建), Zhaojun Mo(莫兆军), Jun Shen(沈俊), and Baogen Shen(沈保根). Chin. Phys. B, 2022, 31(11): 117503.
[3]	First-principles study of structural and opto-electronic characteristics of ultra-thin amorphous carbon films Xiao-Yan Liu(刘晓艳), Lei Wang(王磊), and Yi Tong(童祎). Chin. Phys. B, 2022, 31(1): 016102.
[4]	Crystallization evolution and relaxation behavior of high entropy bulk metallic glasses using microalloying process Danhong Li(李丹虹), Changyong Jiang(江昌勇), Hui Li(栗慧), and Mahander Pandey. Chin. Phys. B, 2021, 30(6): 066401.
[5]	Degradation of β-Ga₂O₃ Schottky barrier diode under swift heavy ion irradiation Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Chin. Phys. B, 2021, 30(5): 056110.
[6]	Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Chin. Phys. B, 2021, 30(11): 118102.
[7]	Accurate prediction method for the microstructure of amorphous alloys without non-metallic elements Wei Zhao(赵伟), Jia-Lin Cheng(成家林), Gong Li(李工), and Xin Wang(王辛). Chin. Phys. B, 2021, 30(11): 116103.
[8]	Magnetic properties and promising cryogenic magneto-caloric performances of Gd₂₀Ho₂₀Tm₂₀Cu₂₀Ni₂₀ amorphous ribbons Yikun Zhang(张义坤), Bingbing Wu(吴兵兵), Dan Guo(郭丹), Jiang Wang(王江), and Zhongming Ren(任忠鸣). Chin. Phys. B, 2021, 30(1): 017501.
[9]	Effect of Sn and Al additions on the microstructure and mechanical properties of amorphous Ti-Cu-Zr-Ni alloys Fu-Chuan Chen(陈福川), Fu-Ping Dai(代富平), Xiao-Yi Yang(杨霄熠), Ying Ruan(阮莹), Bing-Bo Wei(魏炳波). Chin. Phys. B, 2020, 29(6): 066401.
[10]	Effect of Ni substitution on the formability and magnetic properties of Gd₅₀Co₅₀ amorphous alloy Ben-Zheng Tang(唐本镇), Xiao-Ping Liu(刘晓萍), Dong-Mei Li(李冬梅), Peng Yu(余鹏), Lei Xia(夏雷). Chin. Phys. B, 2020, 29(5): 056401.
[11]	A method of generating random bits by using electronic bipolar memristor Bin-Bin Yang(杨彬彬), Nuo Xu(许诺), Er-Rui Zhou(周二瑞), Zhi-Wei Li(李智炜), Cheng Li(李成), Pin-Yun Yi(易品筠), Liang Fang(方粮). Chin. Phys. B, 2020, 29(4): 048505.
[12]	Ab initio calculations on oxygen vacancy defects in strained amorphous silica Bao-Hua Zhou(周保花), Fu-Jie Zhang(张福杰), Xiao Liu(刘笑), Yu Song(宋宇), Xu Zuo(左旭). Chin. Phys. B, 2020, 29(4): 047103.
[13]	Molecular dynamics simulation of atomic hydrogen diffusion in strained amorphous silica Fu-Jie Zhang(张福杰), Bao-Hua Zhou(周保花), Xiao Liu(刘笑), Yu Song(宋宇), Xu Zuo(左旭). Chin. Phys. B, 2020, 29(2): 027101.
[14]	Jamming in confined geometry: Criticality of the jamming transition and implications of structural relaxation in confined supercooled liquids Jun Liu(柳军), Hua Tong(童华), Yunhuan Nie(聂运欢), and Ning Xu(徐宁). Chin. Phys. B, 2020, 29(12): 126302.
[15]	A systematic study of light dependency of persistent photoconductivity in a-InGaZnO thin-film transistors Yalan Wang(王雅兰), Mingxiang Wang(王明湘), Dongli Zhang(张冬利), and Huaisheng Wang(王槐生). Chin. Phys. B, 2020, 29(11): 118101.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells

Cite this article:

Online attention

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells