Filamentation-assisted fourth-order nonlinear process in KTP crystal

doi:10.1088/1674-1056/19/3/034209

Abstract We present an experimental investigation of a filamentation-assisted fourth-order nonlinear optical process in KTP crystals pumped by intense 1.53 eV (807 nm) femtosecond laser pulses. Femtosecond light pulses at 2.58 eV (480 nm) are generated by the fourth-order nonlinear polarization $(P^{(4)}(\omega_2))=\chi^{(4)}(\omega_2, \omega, \omega, \omega, -\omega_1)E^3(\omega)E^*(\omega_1)$, where $E(\omega)$ corresponds to the pump frequency and $E(\omega_1)$ to the supercontinuum generated through filamentation). If the system is seeded by a laser beam at $\omega_1$ or $\omega_2$ and there are spatial and temporal overlaps with the pump beam, $E(\omega_1)$ and $E(\omega_2)$ are simultaneously amplified. When the intensity of the seed laser beam exceeds a certain intensity threshold, the contribution of $P^{(4)}(\omega)=\chi^{(4)}(\omega, \omega_1,\omega_2, -\omega, -\omega)E(\omega_1)E(\omega_2)(E^*(\omega))^2$ becomes non-negligible, and the amplification weakens. The conversion efficiency from the pump to the signal at 2.58 eV (480 nm) attains to 0.1%.

Keywords: parametric amplification filamentation fourth-order nonlinear polarization KTP crystal

Received: 13 April 2009
Revised: 14 September 2009
Accepted manuscript online:

PACS:	42.70.Mp	(Nonlinear optical crystals)
	42.65.Ky	(Frequency conversion; harmonic generation, including higher-order harmonic generation)
	42.55.Rz	(Doped-insulator lasers and other solid state lasers)
	42.60.Jf	(Beam characteristics: profile, intensity, and power; spatial pattern formation)

Fund: Project supported by the National Basic Research Program, China (Grant No.~2006CB806007), and the National Natural Science Foundation of China (Grant Nos.~10574006, 10634020 and 10821062).

Cite this article:

Zhang Xi-Peng(张喜鹏), Jiang Hong-Bing(蒋红兵), Chen Li(陈利), Jiang Ying-Ying(蒋莹莹), Yang Hong(杨宏), and Gong Qi-Huang(龚旗煌) Filamentation-assisted fourth-order nonlinear process in KTP crystal 2010 Chin. Phys. B 19 034209

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