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Chin. Phys. B, 2010, Vol. 19(10): 107305    DOI: 10.1088/1674-1056/19/10/107305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric

Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-$\kappa$ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-$\kappa$ organic dielectric.
Keywords:  AlGaN/GaN high electron mobility transistor      electrical property      organic dielectric  
Received:  26 January 2010      Revised:  10 May 2010      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.61.Ey (III-V semiconductors)  
  77.22.Ch (Permittivity (dielectric function))  
  77.55.+f  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50932002), the Youth Foundation (Grant No. L08010301JX0805) and Start-up Foundation of University of Electronic Science and Technology of China (Grant No. Y02002010301041), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the State Education Ministry of China (Grant No. A09010301GG-01).

Cite this article: 

Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric 2010 Chin. Phys. B 19 107305

[1] Zhong F, Li X H, Qiu K, Yin Z J, Ji C J, Cao X C, Han Q F, Chen J R and Wang Y Q 2007 Chin. Phys. 16 2786
[2] Torabi A, Ericson P, Yarranton E J and Hoke W E 2002 J. Vac. Sci. Technol. B 20 1234
[3] Guo B Z, Gong N and Yu F Q 2008 Chin. Phys. B 17 290
[4] Stolichnov I, Malin L, Muralt P and Setter N 2006 Appl. Phys. Lett. 88 043512
[5] Hashizume T, Ootomo S and Hasegawa H 2003 Appl. Phys. Lett. 83 2952
[6] Tan W S, Houston P A, Parbrook P J, Hill G and Airey R J 2002 J. Phys. D: Appl. Phys. 35 595
[7] Arulkumaran S, Egawa T, Ishikawa H, Jimbo T and Sano Y 2004 Appl. Phys. Lett. 84 613
[8] Bougrioua Z, Azize M, Lorenzini P, Laügt M and Haas H 2005 Phys. Stat. Sol. (a) 202 536
[9] Jena D and Konar A 2007 Phys. Rev. Lett. 98 136805
[10] Chen F, Xia J L, Ferry D K and Tao N J 2009 Nano Lett. 9 2571 endfootnotesize
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