Please wait a minute...
Chin. Phys. B, 2009, Vol. 18(11): 4995-5000    DOI: 10.1088/1674-1056/18/11/063
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

A novel analytical thermal model for multilevel nano-scale interconnects considering the via effect

Zhu Zhang-Ming(朱樟明),Li Ru(李儒), Hao Bao-Tian(郝报田), and Yang Yin-Tang(杨银堂)
Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the temperature of multilevel interconnects, with substrate temperature given. Based on the proposed model and the 65 nm complementary metal oxide semiconductor (CMOS) process parameter, the temperature of nano-scale interconnects is computed. The computed results show that the via effect has a great effect on local interconnects, but the reduction of thermal conductivity has little effect on local interconnects. With the reduction of thermal conductivity or the increase of current density, however, the temperature of global interconnects rises greatly, which can result in a great deterioration in their performance. The proposed model can be applied to computer aided design (CAD) of very large-scale integrated circuits (VLSIs) in nano-scale technologies.
Keywords:  multilevel interconnects      temperature distribution      self-heating      via effect  
Received:  18 May 2009      Revised:  25 June 2009      Accepted manuscript online: 
PACS:  85.40.Bh (Computer-aided design of microcircuits; layout and modeling)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
  66.70.-f (Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60676009 and 60725415), the National High Technology Research and Development Program of China (Grant Nos 2009AA01Z258 and 2009AA01Z260).

Cite this article: 

Zhu Zhang-Ming(朱樟明),Li Ru(李儒), Hao Bao-Tian(郝报田), and Yang Yin-Tang(杨银堂) A novel analytical thermal model for multilevel nano-scale interconnects considering the via effect 2009 Chin. Phys. B 18 4995

[1] Current-dependent positive magnetoresistance inLa0.8Ba0.2MnO3 ultrathin films
Guankai Lin(林冠凯), Haoru Wang(王昊儒), Xuhui Cai(蔡旭晖), Wei Tong(童伟), and Hong Zhu(朱弘). Chin. Phys. B, 2021, 30(9): 097502.
[2] Noise temperature distribution of superconducting hot electron bolometer mixers
Kang-Min Zhou(周康敏), Wei Miao(缪巍), Yue Geng(耿悦), Yan Delorme, Wen Zhang(张文), Yuan Ren(任远), Kun Zhang(张坤), Sheng-Cai Shi(史生才). Chin. Phys. B, 2020, 29(5): 058505.
[3] Flow characteristics of supersonic gas passing through a circular micro-channel under different inflow conditions
Guang-Ming Guo(郭广明), Qin Luo(罗琴), Lin Zhu(朱林), Yi-Xiang Bian(边义祥). Chin. Phys. B, 2019, 28(6): 064702.
[4] Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors
Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Chin. Phys. B, 2019, 28(1): 017303.
[5] Thermal analysis of GaN-based laser diode mini-array
Jun-Jie Hu(胡俊杰), Shu-Ming Zhang(张书明), De-Yao Li(李德尧), Feng Zhang(张峰), Mei-Xin Feng(冯美鑫), Peng-Yan Wen(温鹏雁), Jian-Pin Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉). Chin. Phys. B, 2018, 27(9): 094208.
[6] Electrical and thermal characterization of near-surface electrical discharge plasma actuation driven by radio frequency voltage at low pressure
Zhen Yang(杨臻), Hui-Min Song(宋慧敏), Di Jin(金迪), Min Jia(贾敏), Kang Wang(王康). Chin. Phys. B, 2018, 27(8): 085205.
[7] Reconstruction model for temperature and concentration profiles of soot and metal-oxide nanoparticles in a nanofluid fuel flame by using a CCD camera
Guannan Liu(刘冠楠), Dong Liu(刘冬). Chin. Phys. B, 2018, 27(5): 054401.
[8] Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor
Shi-Zheng Yang(杨施政), Hong-Liang Lv(吕红亮), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门), Bin Lu(芦宾), Si-Lu Yan(严思璐). Chin. Phys. B, 2018, 27(10): 108101.
[9] Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes
Ming-Can Qian(钱明灿), Shu-Fang Zhang(张淑芳), Hai-Jun Luo(罗海军), Xing-Ming Long(龙兴明), Fang Wu(吴芳), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Fan-Ming Meng(孟凡明), Bao-Shan Hu(胡宝山). Chin. Phys. B, 2017, 26(10): 104402.
[10] Two-dimensional thermal illusion device with arbitrary shape based on complementary media
Ge Xia(夏舸), Wei Kou(寇蔚), Li Yang(杨立), Yong-Cheng Du(杜永成). Chin. Phys. B, 2017, 26(10): 104403.
[11] Thermal and induced flow characteristics of radio frequency surface dielectric barrier discharge plasma actuation at atmospheric pressure
Wei-long Wang(王蔚龙), Jun Li(李军), Hui-min Song(宋慧敏), Di Jin(金迪), Min Jia(贾敏), Yun Wu(吴云). Chin. Phys. B, 2017, 26(1): 015205.
[12] A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT
Qiang Fu(付强), Wan-Rong Zhang(张万荣), Dong-Yue Jin(金冬月), Yan-Xiao Zhao(赵彦晓), Xiao Wang(王肖). Chin. Phys. B, 2016, 25(12): 124401.
[13] Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect
Zheng Zhi (郑直), Li Wei (李威), Li Ping (李平). Chin. Phys. B, 2013, 22(4): 047701.
[14] An RLC interconnect analyzable crosstalk model considering self-heating effect
Zhu Zhang-Ming(朱樟明) and Liu Shu-Bin(刘术彬) . Chin. Phys. B, 2012, 21(2): 028401.
[15] Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors
Pu Yan(蒲颜), Pang Lei(庞磊), Chen Xiao-Juan(陈晓娟), Yuan Ting-Ting(袁婷婷), Luo Wei-Jun(罗卫军), and Liu Xin-Yu(刘新宇) . Chin. Phys. B, 2011, 20(9): 097305.
No Suggested Reading articles found!