Abstract Ge-doped GaAs single crystals have been grown by liquid-encapsulated Czochralski method in absence and presence of a magnetic field of 4000Gauss. By means of high op-tical efficiency photoluminescence, spectra of the grown crystals at room temperature were obtained, which consist of two emission bands A and B at 1.39-1.42eV and 0.97-1.05eV, respectively. Comparing the photoluminescence mappings with microphotographs of etched wafers, Hall effect results and electron probe microanalyses of the n- and p-type crystals with different Ge concentrations, we considered that the emission bands A and B originate from Ge-related acceptor and donor complexes, respectively. The complexes were formed during crystal growth, mainly due to temperature fluctuations in molten Ge-doped GaAs. The concentrations and homogeneities of the defects can be improved by the application of a magnetic field during crystal growth to suppress the temperature fluctuation.
Received: 19 January 1994
Accepted manuscript online:
(Galvanomagnetic and other magnetotransport effects)
Fund: Project supported by the National Natural Science Foundation of China, and by the Natural Science Foundation of Fujian Province, also by the State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics.
Cite this article:
KANG JUN-YONG (康俊勇), HUANG QI-SHENG (黄启圣) INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD 1995 Acta Physica Sinica (Overseas Edition) 4 139
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