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Chin. Phys. B, 0, Vol. (): 88503-088503    DOI: 10.1088/1674-1056/ab9738

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Mei-Na Zhang(张美娜)1, Yan Shao(邵龑)1,2, Xiao-Lin Wang(王晓琳)1, Xiaohan Wu(吴小晗)1, Wen-Jun Liu(刘文军)1, Shi-Jin Ding(丁士进)1
1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
2 Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Abstract  Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years. However, such a stack assembly of a halide perovskite layer/an a-IGZO channel, even with an organic semiconductor film inserted between them, easily has a very limited photoresponsivity. In this article, we investigate photoresponsive characteristics of TFTs by using CsPbX3 (X=Br or I) quantum dots (QDs) embedded into the a-IGZO channel, and attain a high photoresponsivity over 103A·W-1, an excellent detectivity in the order of 1016 Jones, and a light-to-dark current ratio up to 105 under visible lights. This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel. Moreover, spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps. Thus, this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.
Keywords:  perovskite quantum dots      a-IGZO      thin-film transistor      photoresponsive characteristics     
Received:  22 April 2020      Published:  05 July 2020
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  81.07.Ta (Quantum dots)  
  85.30.Tv (Field effect devices)  
  81.05.Gc (Amorphous semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61874029) and the National Key Technologies R&D Program of China (Grant No. 2015ZX02102-003).
Corresponding Authors:  Xiaohan Wu, Shi-Jin Ding     E-mail:;

Cite this article: 

Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进) Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels 0 Chin. Phys. B 88503

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