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Chin. Phys. B, 2017, Vol. 26(4): 047307    DOI: 10.1088/1674-1056/26/4/047307
Special Issue: TOPICAL REVIEW — ZnO-related materials and devices
TOPICAL REVIEW—ZnO-related materials and devices Prev   Next  

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Yong-Hui Zhang(张永晖)1, Zeng-Xia Mei(梅增霞)1, Hui-Li Liang(梁会力)1, Xiao-Long Du(杜小龙)1,2
1 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
Abstract  

Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations.

Keywords:  zinc oxide      flexible electronics      transparent electronics      thin-film transistors  
Received:  14 September 2016      Revised:  24 January 2017      Accepted manuscript online: 
PACS:  73.61.Ga (II-VI semiconductors)  
  85.30.Tv (Field effect devices)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grants Nos. 61306011, 11274366, 51272280, 11674405, and 11675280).

Corresponding Authors:  Zeng-Xia Mei, Xiao-Long Du     E-mail:  zxmei@iphy.ac.cn;xldu@iphy.ac.cn

Cite this article: 

Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙) Review of flexible and transparent thin-film transistors based on zinc oxide and related materials 2017 Chin. Phys. B 26 047307

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