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Chin. Phys. B, 2014, Vol. 23(6): 068501    DOI: 10.1088/1674-1056/23/6/068501

Positive gate-bias temperature instability of ZnO thin-film transistor

Liu Yu-Ronga b, Su Jinga, Lai Pei-Taoc, Yao Ruo-Hea b
a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
b National Enginering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China;
c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China
Abstract  The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current-voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate-dielectric/channel interface.
Keywords:  thin-film transistors (TFTs)      zinc oxide      gate-bias instability      threshold-voltage shift  
Received:  24 July 2013      Revised:  26 December 2013      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.61.Ga (II-VI semiconductors)  
  72.80.Ey (III-V and II-VI semiconductors)  
  73.20.-r (Electron states at surfaces and interfaces)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085) and the Research Grants Council of Hong Kong, China (Grant No. 7133/07E).
Corresponding Authors:  Liu Yu-Rong     E-mail:

Cite this article: 

Liu Yu-Rong, Su Jing, Lai Pei-Tao, Yao Ruo-He Positive gate-bias temperature instability of ZnO thin-film transistor 2014 Chin. Phys. B 23 068501

[1] Carcia P F, McLean R S, Reilly M H and Nunes G 2003 Appl. Phys. Lett. 82 1117
[2] Chiang H Q, Wager J F, Hoffman R L, Jeong J and Keszler D A 2005 Appl. Phys. Lett. 86 013503
[3] Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 1594
[4] Lin C Y, Chien C W, Wu C H, Hsieh H H, Wu C C, Yeh Y H, Cheng C C, Lai C M and Yu M J 2012 IEEE Trans. Electron Dev. 59 1701
[5] Ye Z and Wong M 2012 IEEE Eelectron Dev. Lett. 33 549
[6] Lee J K and Choi D K 2012 J. Nanosci. Nanotechnol. 12 5859
[7] Li S S, Liang C X, Wang X X, Li Y H, Song S M, Xin Y Q and Yang T L 2013 Acta Phys. Sin. 62 077302 (in Chinese)
[8] Zhang L, Li J, Zhang X W, Jiang X Y and Zhang Z L 2009 Appl. Phys. Lett. 95 072112
[9] Yoshida T, Tachibana T, Maemoto T, Sasa S and Inoue M 2010 Appl. Phys. A 101 685
[10] Carcia P F, Mclean R S and Reilly M H 2006 Appl. Phys. Lett. 88 123509
[11] Zhang G M, Guo L Q, Zhao K S and Yan Z H 2013 Acta Phys. Sin. 62 137201 (in Chinese)
[12] Park J S, Jeong J K, Mo Y G, Kim H D and Kim C J 2008 Appl. Phys. Lett. 93 033513
[13] Chiu H C, Wang H C, Lin C K, Chiu C W, Fu J S, Hsueh K P and Chien F T 2011 Electrochem. Solid-state Lett. 14 H385
[14] Lu A, Sun J, Jiang J and Wan Q 2010 Appl. Phys. Lett. 96 043114
[15] Kim W S, Moon Y K, Kim K T, Shin S Y, Ahn B D, Lee J H and Park J W 2011 Thin Solid Films 519 6849
[16] Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
[17] Huang H Q, Sun J, Liu F J, Zhao J W, Hu Z F, Li Z J, Zhang X Q and Wang Y S 2011 Chin. Phys. Lett. 28 128502
[18] Kim W S, Moon Y K, Kim K T, Shin S Y and Park J W 2011 Thin Solid Films 520 578
[19] Cross R B M, De Souza M M, Deane S C and Young N D 2008 IEEE Trans. Electron Dev. 55 1109
[20] Li M, Lan L F, Xu M, Wang L, Xu H, Luo D X, Zou J H, Tao H, Yao R H and Peng J B 2011 J. Phys. D: Appl. Phys. 44 455102
[21] Yuh J T and Bae B S 2010 Electron. Mater. Lett. 6 221
[22] Cross R B M and De Souza M M 2008 IEEE Trans. Dev. Mater. Reliab. 8 277
[23] Libsch F R and Kanicki J 1993 Appl. Phys. Lett. 62 1286
[24] Lee J M, Cho I T, Lee J H and Kwon H I 2008 Appl. Phys. Lett. 93 093504
[25] Lee J S, Park J S, Pyo Y S, Lee D B, Kim E H, Stryakhilev D, Kim T W, Jin D U and Mo Y G 2009 Appl. Phys. Lett. 95 123502
[26] Grecu S, Roggenbuck M, Opitz A and Brutting W 2006 Org. Electron. 7 276
[27] Itoh E and Miyairi K 2006 Thin Solid Films 499 95
[28] Park S H K, Hwang C S, Ryu M, Yang S, Byun C, Shin J, Lee J I, Lee K, Oh M S and Im S 2009 Adv. Mater. 21 678
[29] Tsai C T, Chang T C, Chen S C, Lo I, Tsao S W, Hung M C, Chang J J, Wu C Y and Huang C Y 2010 Appl. Phys. Lett. 96 242105
[30] Tsai Y S and Chen J Z 2012 IEEE Trans. Electron Dev. 59 151
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