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CN 11-5639/O4
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Other articles related with "81.07.Ta":
78503 Mei-Na Zhang, Yan Shao, Xiao-Lin Wang, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
  Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
    Chin. Phys. B   2020 Vol.29 (7): 78503-078503 [Abstract] (31) [HTML 1 KB] [PDF 945 KB] (40)
88503 Mei-Na Zhang, Yan Shao, Xiao-Lin Wang, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
  Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
    Chin. Phys. B   0 Vol. (): 88503-088503 [Abstract] (24) [HTML 0 KB] [PDF 818 KB] (57)
58101 Tong Liu, Hong Zhang, Xin-Lu Cheng
  Insulator-metal transition in CaTiO3 quantum dots induced by ultrafast laser pulses
    Chin. Phys. B   2020 Vol.29 (5): 58101-058101 [Abstract] (40) [HTML 1 KB] [PDF 2581 KB] (49)
118103 Qianqian Wu, Fan Cao, Lingmei Kong, Xuyong Yang
  InP quantum dots-based electroluminescent devices
    Chin. Phys. B   2019 Vol.28 (11): 118103-118103 [Abstract] (163) [HTML 1 KB] [PDF 4160 KB] (253)
98802 Yun-Long Deng, Zhi-Yuan Xu, Kai Cai, Fei Ma, Juan Hou, Shang-Long Peng
  The effect of Mn-doped ZnSe passivation layer on the performance of CdS/CdSe quantum dot-sensitized solar cells
    Chin. Phys. B   2019 Vol.28 (9): 98802-098802 [Abstract] (138) [HTML 1 KB] [PDF 1814 KB] (106)
78104 Hui-Ming Hao, Xiang-Bin Su, Jing Zhang, Hai-Qiao Ni, Zhi-Chuan Niu
  Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μ quantum dot lasers
    Chin. Phys. B   2019 Vol.28 (7): 78104-078104 [Abstract] (167) [HTML 1 KB] [PDF 609 KB] (91)
128105 Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Sheng-Wen Xie, Jin-Ming Shang, Yun-Hao Zhao, Chen-Yuan Cai, Ren-Chao Che, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  1.3-μm InAs/GaAs quantum dots grown on Si substrates
    Chin. Phys. B   2018 Vol.27 (12): 128105-128105 [Abstract] (316) [HTML 1 KB] [PDF 5545 KB] (170)
97802 Ben Ma, Si-Hang Wei, Ze-Sheng Chen, Xiang-Jun Shang, Hai-Qiao Ni, Zhi-Chuan Niu
  Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot
    Chin. Phys. B   2018 Vol.27 (9): 97802-097802 [Abstract] (146) [HTML 1 KB] [PDF 644 KB] (101)
78102 Ya-Chuan Liang, Kai-Kai Liu, Ying-Jie Lu, Qi Zhao, Chong-Xin Shan
  Silica encapsulated ZnO quantum dot-phosphor nanocomposites: Sol-gel preparation and white light-emitting device application
    Chin. Phys. B   2018 Vol.27 (7): 78102-078102 [Abstract] (179) [HTML 1 KB] [PDF 1655 KB] (130)
18101 Lu Zhang, Yongsheng Wang, Yanfang Dong, Xuan Zhao, Chen Fu, Dawei He
  Facilitative effect of graphene quantum dots in MoS2 growth process by chemical vapor deposition
    Chin. Phys. B   2018 Vol.27 (1): 18101-018101 [Abstract] (208) [HTML 0 KB] [PDF 2010 KB] (196)
68103 Guan-Qing Yang, Shi-Zhu Zhang, Bo Xu, Yong-Hai Chen, Zhan-Guo Wang
  Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method
    Chin. Phys. B   2017 Vol.26 (6): 68103-068103 [Abstract] (229) [HTML 1 KB] [PDF 489 KB] (301)
107805 Xiang-Jun Shang, Jian-Xing Xu, Ben Ma, Ze-Sheng Chen, Si-Hang Wei, Mi-Feng Li, Guo-Wei Zha, Li-Chun Zhang, Ying Yu, Hai-Qiao Ni, Zhi-Chuan Niu
  Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots
    Chin. Phys. B   2016 Vol.25 (10): 107805-107805 [Abstract] (177) [HTML 1 KB] [PDF 1889 KB] (326)
108102 Hao Wang, Wei-Hua Han, Xiao-Song Zhao, Wang Zhang, Qi-Feng Lyu, Liu-Hong Ma, Fu-Hua Yang
  Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor
    Chin. Phys. B   2016 Vol.25 (10): 108102-108102 [Abstract] (226) [HTML 1 KB] [PDF 1432 KB] (348)
88103 Anilkumar M, Bindu K R, Sneha Saj A, Anila E I
  Enhanced biocompatibility of ZnS:Mn quantum dots encapsulated with Aloe vera extract for therapeutic applications
    Chin. Phys. B   2016 Vol.25 (8): 88103-088103 [Abstract] (147) [HTML 1 KB] [PDF 7866 KB] (410)
68103 Wu Yan-Hua, Wu Jian, Jin Peng, Wang Fei-Fei, Hu Fa-Jie, Wei Heng, Wang Zhan-Guo
  Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser
    Chin. Phys. B   2015 Vol.24 (6): 68103-068103 [Abstract] (311) [HTML 1 KB] [PDF 264 KB] (260)
28101 Wang Jun, Hu Hai-Yang, Deng Can, He Yun-Rui, Wang Qi, Duan Xiao-Feng, Huang Yong-Qing, Ren Xiao-Min
  Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition
    Chin. Phys. B   2015 Vol.24 (2): 28101-028101 [Abstract] (296) [HTML 0 KB] [PDF 689 KB] (424)
104206 Wu Jian, Jin Peng, Li Xin-Kun, Wei Heng, Wu Yan-Hua, Wang Fei-Fei, Chen Hong-Mei, Wu Ju, Wang Zhan-Guo
  A mode-locked external-cavity quantum-dot laser with a variable repetition rate
    Chin. Phys. B   2013 Vol.22 (10): 104206-104206 [Abstract] (204) [HTML 1 KB] [PDF 292 KB] (1612)
94211 Wei Heng, Jin Peng, Luo Shuai, Ji Hai-Ming, Yang Tao, Li Xin-Kun, Wu Jian, An Qi, Wu Yan-Hua, Chen Hong-Mei, Wang Fei-Fei, Wu Ju, Wang Zhan-Guo
  A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range
    Chin. Phys. B   2013 Vol.22 (9): 94211-094211 [Abstract] (218) [HTML 1 KB] [PDF 489 KB] (451)
58104 Xiong Fei, Yang Tao, Song Zhao-Ning, Yang Pei-Zhi
  Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition
    Chin. Phys. B   2013 Vol.22 (5): 58104-058104 [Abstract] (227) [HTML 1 KB] [PDF 812 KB] (375)
48102 Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo
  InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration
    Chin. Phys. B   2013 Vol.22 (4): 48102-048102 [Abstract] (274) [HTML 1 KB] [PDF 333 KB] (566)
28102 Li Xin-Kun,Liang De-Chun,Jin Peng,An Qi,Wei Heng,Wu Jian,Wang Zhan-Guo
  InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm
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108503 Liang De-Chun, An Qi, Jin Peng, Li Xin-Kun, Wei Heng, Wu Ju, Wang Zhan-Guo
  Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes
    Chin. Phys. B   2011 Vol.20 (10): 108503-108503 [Abstract] (800) [HTML 0 KB] [PDF 568 KB] (758)
64202 Wu Jian, Lü Xue-Qin, Jin Peng, Meng Xian-Quan, Wang Zhan-Guo
  Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
    Chin. Phys. B   2011 Vol.20 (6): 64202-064202 [Abstract] (1059) [HTML 0 KB] [PDF 280 KB] (748)
67302 Zhao Wei, Yu Zhong-Yuan, Liu Yu-Min
  Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions
    Chin. Phys. B   2010 Vol.19 (6): 67302-067302 [Abstract] (1196) [HTML 0 KB] [PDF 1111 KB] (923)
881 Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min
  The strain relaxation of InAs/GaAs self-organized quantum dot
    Chin. Phys. B   2009 Vol.18 (3): 881-887 [Abstract] (819) [HTML 0 KB] [PDF 1298 KB] (940)
944 Dai Min, Zhang Lin, Bao Yun, Shi Jian-Jun, Chen Kai, Li Wei, Huang Xin-Fan, Chen Kun-Ji
  The charge storage of the nc-Si layer
    Chin. Phys. B   2002 Vol.11 (9): 944-947 [Abstract] (800) [HTML 0 KB] [PDF 237 KB] (587)
222 Li Yue-fa, Liu Feng-qi, Xu Bo, Lin Feng, Wu Jü, Jiang Wei-hong, Ding Ding, Wang Zhan-guo
  InAs SELF-ASSEMBLED NANOSTRUCTURES GROWN ON InP(001)
    Chin. Phys. B   2000 Vol.9 (3): 222-224 [Abstract] (315) [HTML 0 KB] [PDF 800 KB] (327)
97 Kong Yun-Chuan, Zhou Da-Yong, Lan Qing, Liu Jin-Long, Miao Zhen-Hua, Feng Song-Lin, Niu Zhi-Chuan
  A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy
    Chin. Phys. B   2003 Vol.12 (1): 97-99 [Abstract] (621) [HTML 0 KB] [PDF 181 KB] (434)
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