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Chin. Phys. B, 2014, Vol. 23(6): 065201    DOI: 10.1088/1674-1056/23/6/065201
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Prev   Next  

Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon

Xu Dong-Shenga, Zou Shuaia b, Xin Yua, Su Xiao-Donga, Wang Xu-Shengb
a Provincial Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;
b Canadian Solar Inc. China, Suzhou 215000, China
Abstract  Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper, capacitively coupled plasma (CCP) driven by a dual frequency (DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency (RF) input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3×109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom ([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9×109 cm-3.
Keywords:  dual frequency capacitively coupled plasma      plasma texturing      multi-crystalline silicon      electron density  
Received:  12 November 2013      Revised:  09 December 2013      Published:  15 June 2014
PACS:  52.27.Cm (Multicomponent and negative-ion plasmas)  
  52.70.Ds (Electric and magnetic measurements)  
  52.70.Nc (Particle measurements)  
Fund: Project supported by the Prospective Project of Industry-University-Research Institution of Jiangsu Province, China (Grant No. BY2010125) and the National Natural Science Foundation of China (Grant No. 11175127).
Corresponding Authors:  Xin Yu     E-mail:  xylzf_1999@suda.edu.cn

Cite this article: 

Xu Dong-Sheng, Zou Shuai, Xin Yu, Su Xiao-Dong, Wang Xu-Sheng Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon 2014 Chin. Phys. B 23 065201

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