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Chin. Phys. B, 2014, Vol. 23(6): 068501    DOI: 10.1088/1674-1056/23/6/068501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Positive gate-bias temperature instability of ZnO thin-film transistor

Liu Yu-Ronga b, Su Jinga, Lai Pei-Taoc, Yao Ruo-Hea b
a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
b National Enginering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China;
c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China
Abstract  The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current-voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate-dielectric/channel interface.
Keywords:  thin-film transistors (TFTs)      zinc oxide      gate-bias instability      threshold-voltage shift  
Received:  24 July 2013      Revised:  26 December 2013      Published:  15 June 2014
PACS:  85.30.Tv (Field effect devices)  
  73.61.Ga (II-VI semiconductors)  
  72.80.Ey (III-V and II-VI semiconductors)  
  73.20.-r (Electron states at surfaces and interfaces)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085) and the Research Grants Council of Hong Kong, China (Grant No. 7133/07E).
Corresponding Authors:  Liu Yu-Rong     E-mail:  phlyr@scut.edu.cn

Cite this article: 

Liu Yu-Rong, Su Jing, Lai Pei-Tao, Yao Ruo-He Positive gate-bias temperature instability of ZnO thin-film transistor 2014 Chin. Phys. B 23 068501

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