Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

doi:10.1088/1674-1056/20/2/028103

Abstract High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as 113 gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.

Keywords: boron-doped type-IIb diamond temperature gradient method semiconductor

Received: 04 August 2010
Revised: 20 September 2010
Accepted manuscript online:

PACS:	81.10.Dn	(Growth from solutions)
	81.05.Uw

Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51001042), and the Doctor Foundation of the Henan Polytechnic University, China (Grant No. 2010-32).

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Li Shang-Sheng(李尚升), Ma Hong-An(马红安), Li Xiao-Lei(李小雷), Su Tai-Chao(宿太超), Huang Guo-Feng(黄国锋), Li Yong(李勇), and Jia Xiao-Peng(贾晓鹏) Synthesis and characterization of p-type boron-doped IIb diamond large single crystals 2011 Chin. Phys. B 20 028103

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Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

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