ION-BEAM-INDUCED SOLID PHASE CRYSTALLIZATION OF MeV Si+-IMPLANTED Si(100)
XU TIAN-BING (徐天冰)a, ZHU PEI-RAN (朱沛然)a, ZHOU JUN-SI (周俊思)a, LI DAI-QING (李岱青)b, REN TING-QI (任廷琦)b, ZHAO QING-TAI (赵清太)c, LIU XIANG-DONG (刘向东)d, LIU JIE-TIAN (刘洁田)d
a Institute of Physics, Academy Sinica, Beijing 100080, China; b Department of Physics, Yantai Teachers College, Yantai 264025, China; c Institute of Microelectronics, Peking University, Beijing 100871, China; d Department of Physics, Shandong University, Jinan 250100, China
Abstract The behavior of ion-beam-induced crystallization of a buried amorphous layer created by means of MeV Si+ irradiation at 300℃ in Si(100) was studied by Rutherford backscattering and channeling technique. Sohd phase epitaxial crystallizations occurred from both the front and the back amorphous-crystalline(a/c) interfaces with the growth thickness being increased linearly with increasing dose of the annealing ion beam, Nuclear energy deposition was proved to play a dominant role in the process of ion-beam-induced crystallization. The high density of electronic excitation, which could enhance defect production near or at the a/c interface, may thus enhance the nuclearly normalized growth rate of ion-beam-induced crystallization at the front a/c interface.
Received: 14 February 1994
Accepted manuscript online:
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