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Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field |
| Yilin Li(李屹林)1, Hui Zhu(朱慧)1,†, Rui Li(李锐)1, Jie Liu(柳杰)1, Jinjuan Xiang(项金娟)2, Na Xie(解娜)1, Zeng Huang(黄增)1, Zhixuan Fang(方志轩)1, Xing Liu(刘行)1, and Lixing Zhou(周丽星)1 |
1 Faculty of Information Technology, Beijing University of Technology, Beijing 100023, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract We examined the wake-up effect in a TiN/Hf0.4Zr0.6O2/TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance-voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field.
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Received: 25 November 2021
Revised: 09 February 2022
Accepted manuscript online: 02 March 2022
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PACS:
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85.50.Gk
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(Non-volatile ferroelectric memories)
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77.55.D
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(High-permittivity gate dielectric films)
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77.55.fp
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(Other ferroelectric films)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61201046) and the Natural Science Foundation of Beijing, China (Grant Nos. 4202009 and 4162013). |
Corresponding Authors:
Hui Zhu
E-mail: zhuhui@bjut.edu.cn
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Cite this article:
Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星) Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field 2022 Chin. Phys. B 31 088502
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