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Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET |
| Hong Zhang(张鸿)1, Hong-Xia Guo(郭红霞)1,2,†, Feng-Qi Zhang(张凤祁)2, Xiao-Yu Pan(潘霄宇)2, Yi-Tian Liu(柳奕天)1, Zhao-Qiao Gu(顾朝桥)1, An-An Ju(琚安安)1, and Xiao-Ping Ouyang(欧阳晓平)2 |
1 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Northwest Institute of Nuclear Technology, Xi'an 710024, China |
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Abstract The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation. The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track. The time for energy deposition in SiC is on the order of picoseconds. The TCAD is used to simulate the single event burnout (SEB) sensitivity of SiC MOSFET at four representative incident positions and four incident depths. When heavy ions strike vertically from SiC MOSFET source electrode, the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer, strike from the channel, and strike from the body diode region. High current and strong electric field simultaneously appear in the local area of SiC MOSFET, resulting in excessive power dissipation, further leading to excessive high lattice temperature. The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature. In the SEB simulation of SiC MOSFET at different incident depths, when the incident depth does not exceed the device's epitaxial layer, the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.
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Received: 30 March 2021
Revised: 13 May 2021
Accepted manuscript online: 26 May 2021
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PACS:
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85.30.Tv
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(Field effect devices)
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61.80.Jh
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(Ion radiation effects)
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51.50.+v
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(Electrical properties)
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84.30.Jc
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(Power electronics; power supply circuits)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11875229 and 12075065). |
Corresponding Authors:
Hong-Xia Guo
E-mail: guohxnint@126.com
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Cite this article:
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平) Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET 2022 Chin. Phys. B 31 018501
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[1] Dimitrijev S and Philippe J 2003 Microelectron. Reliab. 43 225
[2] Hudgins J L, Simin G S, Santi S and Khan M A 2003 IEEE Trans. Nucl. Sci. 18 907
[3] Östling M, Mikael, Ghandi R and Zetterling C M 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, May 23–26, 2011, San Diego, CA, USA, p. 1015
[4] Wang Y H, Zhang Y M, Zhang Y M, Zhang L, Jia R X and Chen D 2010 Chin. Phys. B 19 036803
[5] Mizuta E, Kuboyama S, Abe H, Iwata Y and Tamura T 2014 IEEE Trans. Nucl. Sci. 61 1924
[6] Lauenstein J M, Casey M C, Topper A D, Wilcox E P, Phan A M and LaBel K A 2015 IEEE Nuclear & Space Radiation Effects Conference, July 13–17, 2015, Boston, USA, p. 12
[7] Akturk A, Wilkins R, McGarrity J and Gersey B 2017 IEEE Trans. Nucl. Sci. 64 529
[8] Kuboyama S, Kamezawa C, Satoh Y, Hirao T and Ohyama H 2007 IEEE Trans. Nucl. Sci. 54 2379
[9] Lauenstein J M, Casey M C, LaBel K A, Topper A D, Wilcox E P, Kim H and Phan A M 2014 the NASA Electronic Parts and Packaging Electronics Technology Workshop, June 17–19, 2014, Greenbelt, MD, p. 118
[10] Javanainen A, Galloway K F, Nicklaw C, Bosser A L, Ferlet-Cavrois V, Lauenstein J M, Pintacuda F, Reed R A, Schrimpf R D, Weller R A and Virtanen A 2017 IEEE Trans. Nucl. Sci. 64 415
[11] Witulski A F, Ball D R, Galloway K F, Javanainen A, Lauenstein J M, Sternberg A L and Schrimpf R D 2018 IEEE Trans. Nucl. Sci. 65 1951
[12] McPherson J A, Kowal P J, Pandey G K, Chow T P, Ji W and Woodworth A A 2018 IEEE Trans. Nucl. Sci. 66 474
[13] Ball D R, Galloway K F, Johnson R A, Alles M L, Sternberg A L, Sierawski B D, Witulski A F, Reed R A, Schrimpf R D, Hutson J M, Javanainen A and Lauenstein J M 2019 IEEE Trans. Nucl. Sci. 67 22
[14] Agostinelliae S, Allisonas J, Amakoe K, et al. 2003 Nucl. Instrum. Method A 506 250
[15] Dufour C, Khomenkov V, Rizza G and Toulemonde M 2012 J. Phys. D: Appl. Phys. 45 065302
[16] Allison J, Amako K, Apostolakis J E A, et al. 2006 IEEE Trans. Nucl. Sci. 53 270
[17] Nilsson O, Mehling H, Horn R, Fricke J and Hofmann D 1997 High Temp.-High Press. 29 7379
[18] Touloukian Y S and Ho C Y 1970 Thermophysical Properties of Matter (New York) pp. 448–450
[19] Martinella C, Stark R, Ziemann T, Alía R G, Kadi Y, Grossner U and Javanainen A 2019 IEEE Trans. Nucl. Sci. 66 1702
[20] Ye X, Xia X C, Liang H W, Li Z, Zhang H Q, Du G T, Cui X Z and Liang X H 2018 Chin. Phys. B 27 087304 |
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