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Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection |
| Xiang Xu(徐翔), Gangquan Si(司刚全)†, Zhang Guo(郭璋), and Babajide Oluwatosin Oresanya |
| State Key Laboratory of Electrical Insulation and Power Equipment, Shaanxi Key Laboratory of Smart Grid, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China |
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Abstract Recently, the memory elements-based circuits have been addressed frequently in the nonlinear circuit theory due to their unique behaviors. Thus, the modeling and characterizing of the mem-elements become essential. In this paper, the analysis of the multiple fractional-order voltage-controlled memcapacitors model in parallel connection is studied. Firstly, two fractional-order memcapacitors are connected in parallel, the equivalent model is derived, and the characteristic of the equivalent memcapacitor is analyzed in positive or negative connection. Then a new understanding manner according to different rate factor K and fractional order α is derived to explain the equivalent modeling structure conveniently. Additionally, the negative order appears, which is a consequence of the combination of memcapacitors in different directions. Meanwhile, the equivalent parallel memcapacitance has been drawn to determine that multiple fractional-order memcapacitors could be calculated as one composite memcapacitor. Thus, an arbitrary fractional-order equivalent memcapacitor could be constructed by multiple fractional-order memcapacitors.
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Received: 05 March 2021
Revised: 15 May 2021
Accepted manuscript online: 27 May 2021
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PACS:
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84.30.Bv
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(Circuit theory)
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07.50.Ek
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(Circuits and circuit components)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 52077160). |
Corresponding Authors:
Gangquan Si
E-mail: sigangquan@mail.xjtu.edu.cn
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Cite this article:
Xiang Xu(徐翔), Gangquan Si(司刚全), Zhang Guo(郭璋), and Babajide Oluwatosin Oresanya Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection 2022 Chin. Phys. B 31 018401
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