Chin. Phys. B, 2022, Vol. 31(1): 018401    DOI: 10.1088/1674-1056/ac05b1
 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next

# Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection

Xiang Xu(徐翔), Gangquan Si(司刚全), Zhang Guo(郭璋), and Babajide Oluwatosin Oresanya
State Key Laboratory of Electrical Insulation and Power Equipment, Shaanxi Key Laboratory of Smart Grid, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
Abstract  Recently, the memory elements-based circuits have been addressed frequently in the nonlinear circuit theory due to their unique behaviors. Thus, the modeling and characterizing of the mem-elements become essential. In this paper, the analysis of the multiple fractional-order voltage-controlled memcapacitors model in parallel connection is studied. Firstly, two fractional-order memcapacitors are connected in parallel, the equivalent model is derived, and the characteristic of the equivalent memcapacitor is analyzed in positive or negative connection. Then a new understanding manner according to different rate factor K and fractional order α is derived to explain the equivalent modeling structure conveniently. Additionally, the negative order appears, which is a consequence of the combination of memcapacitors in different directions. Meanwhile, the equivalent parallel memcapacitance has been drawn to determine that multiple fractional-order memcapacitors could be calculated as one composite memcapacitor. Thus, an arbitrary fractional-order equivalent memcapacitor could be constructed by multiple fractional-order memcapacitors.
Keywords:  memcapacitor      fractional calculus      parallel connection      equivalent model
Received:  05 March 2021      Revised:  15 May 2021      Accepted manuscript online:  27 May 2021
 PACS: 84.30.Bv (Circuit theory) 07.50.Ek (Circuits and circuit components)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 52077160).
Corresponding Authors:  Gangquan Si     E-mail:  sigangquan@mail.xjtu.edu.cn