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Chin. Phys. B, 2021, Vol. 30(4): 047303    DOI: 10.1088/1674-1056/abd397

Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials

Guihua Zhao(赵贵华)1, Li Wang(王力)4, Xi Ke(柯曦)3,†, and Zhiyi Yu(虞志益)1,2,‡
1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China;
2 School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai 519082, China;
3 School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
4 School of Chemistry and Chemical Engineering, Neijiang Normal University, Neijiang 641100, China
Abstract  We demonstrate digital and analog devices with an Ag/MPS3/Au structure based on layered MPS3 (M=Mn, Co, Ni) 2D materials. All devices show the bipolar behavior of resistive switching. In addition, Ag/MnPS3/Au and Ag/NiPS3/Au devices show synaptic characteristics of potentiation and depression. The digital and analog characteristics of resistance states enable Ag/MPS3/Au devices to work as both binary memory and artificial synapse devices. The Ag/MPS3/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS3 materials.
Keywords:  electrochemical metallization memory      memristor      2D materials      neuromorphic computing  
Received:  04 October 2020      Revised:  18 November 2020      Accepted manuscript online:  15 December 2020
PACS:  73.61.-r (Electrical properties of specific thin films)  
  68.37.-d (Microscopy of surfaces, interfaces, and thin films) (Semiconductors)  
Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206200 and 2018YFB2202601) and the National Natural Science Foundation of China (Grant Nos. 61674173, 61834005, and 61902443).
Corresponding Authors:  Corresponding author. E-mail: Corresponding author. E-mail:   

Cite this article: 

Guihua Zhao(赵贵华), Li Wang(王力), Xi Ke(柯曦), and Zhiyi Yu(虞志益) Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials 2021 Chin. Phys. B 30 047303

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