| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials |
| Guihua Zhao(赵贵华)1, Li Wang(王力)4, Xi Ke(柯曦)3,†, and Zhiyi Yu(虞志益)1,2,‡ |
1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China;
2 School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai 519082, China;
3 School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
4 School of Chemistry and Chemical Engineering, Neijiang Normal University, Neijiang 641100, China
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Abstract We demonstrate digital and analog devices with an Ag/MPS3/Au structure based on layered MPS3 (M=Mn, Co, Ni) 2D materials. All devices show the bipolar behavior of resistive switching. In addition, Ag/MnPS3/Au and Ag/NiPS3/Au devices show synaptic characteristics of potentiation and depression. The digital and analog characteristics of resistance states enable Ag/MPS3/Au devices to work as both binary memory and artificial synapse devices. The Ag/MPS3/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS3 materials.
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Received: 04 October 2020
Revised: 18 November 2020
Accepted manuscript online: 15 December 2020
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PACS:
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73.61.-r
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(Electrical properties of specific thin films)
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68.37.-d
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(Microscopy of surfaces, interfaces, and thin films)
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68.55.ag
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(Semiconductors)
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| Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206200 and 2018YFB2202601) and the National Natural Science Foundation of China (Grant Nos. 61674173, 61834005, and 61902443). |
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Corresponding Authors:
†Corresponding author. E-mail: kexi@gdut.edu.cn ‡Corresponding author. E-mail: yuzhiyi@mail.sysu.edu.cn
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Cite this article:
Guihua Zhao(赵贵华), Li Wang(王力), Xi Ke(柯曦), and Zhiyi Yu(虞志益) Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials 2021 Chin. Phys. B 30 047303
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