| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor |
| Si-De Song(宋思德)†, Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) |
| 1 The 58 th Institution of Electronic Science and Technology Group Corporation of China, Wuxi 214000, China |
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Abstract The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively, by means of drain voltage stress and gate bias stress. The results indicate that: (i) High constant drain voltage stress has only a negligible impact on the device electrical parameters, with a slightly first increase and then decrease in output current; (ii) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress, which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface; (iii) The analyzed device showed an excellent behavior at reverse gate bias stress, with almost unaltered threshold voltage, output current, and gate leakage current, exhibiting a large gate swing in the negative direction. The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.
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Received: 15 October 2020
Revised: 12 November 2020
Accepted manuscript online: 23 November 2020
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PACS:
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71.55.Eq
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(III-V semiconductors)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Project supported by the Equipment Developing Advanced Research Program of China (Grant No. 6140A24030107). |
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Corresponding Authors:
†Corresponding author. E-mail: cetc_songsd@163.com
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Cite this article:
Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor 2021 Chin. Phys. B 30 047103
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