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Chin. Phys. B, 2021, Vol. 30(4): 047103    DOI: 10.1088/1674-1056/abccba
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor

Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪)
1 The 58 th Institution of Electronic Science and Technology Group Corporation of China, Wuxi 214000, China
Abstract  The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively, by means of drain voltage stress and gate bias stress. The results indicate that: (i) High constant drain voltage stress has only a negligible impact on the device electrical parameters, with a slightly first increase and then decrease in output current; (ii) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress, which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface; (iii) The analyzed device showed an excellent behavior at reverse gate bias stress, with almost unaltered threshold voltage, output current, and gate leakage current, exhibiting a large gate swing in the negative direction. The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.
Keywords:  high-electron-mobility transistors (HEMTs)      stress      degradation      threshold voltage  
Received:  15 October 2020      Revised:  12 November 2020      Accepted manuscript online:  23 November 2020
PACS:  71.55.Eq (III-V semiconductors)  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Equipment Developing Advanced Research Program of China (Grant No. 6140A24030107).
Corresponding Authors:  Corresponding author. E-mail: cetc_songsd@163.com   

Cite this article: 

Si-De Song(宋思德), Su-Zhen Wu(吴素贞), Guo-Zhu Liu(刘国柱), Wei Zhao(赵伟), Yin-Quan Wang(王印权), Jian-Wei Wu(吴建伟), and Qi He(贺琪) Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor 2021 Chin. Phys. B 30 047103

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