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Chin. Phys. B, 2020, Vol. 29(8): 087201    DOI: 10.1088/1674-1056/ab942d
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals

Hao Zhang(张浩)1, Hui-Li Tang(唐慧丽)1, Nuo-Tian He(何诺天)1, Zhi-Chao Zhu(朱智超)2, Jia-Wen Chen(陈佳文)1, Bo Liu(刘波)1, Jun Xu(徐军)1,3
1 MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China;
2 School of Chemical Science and Engineering, Tongji University, Shanghai 200092, China;
3 Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201899, China
Abstract  

High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe:β-Ga2O3 single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe:β-Ga2O3 single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe:β-Ga2O3 crystal reached to 3.63×1011 Ω·cm. The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs).

Keywords:  Fe:β-Ga2O3 crystal      high resistivity      crystal growth  
Received:  20 April 2020      Revised:  10 May 2020      Published:  05 August 2020
PACS:  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
  71.20.Nr (Semiconductor compounds)  
  78.20.-e (Optical properties of bulk materials and thin films)  
  65.40.-b (Thermal properties of crystalline solids)  
Fund: 

Project supported by the Scientific and Innovative Action Plan of Shanghai, China (Grant No. 18511110502) and Equipment Pre-research Fund Key Project, China (Grant No. 6140922010601).

Corresponding Authors:  Hui-Li Tang     E-mail:  tanghl@tongji.edu.cn

Cite this article: 

Hao Zhang(张浩), Hui-Li Tang(唐慧丽), Nuo-Tian He(何诺天), Zhi-Chao Zhu(朱智超), Jia-Wen Chen(陈佳文), Bo Liu(刘波), Jun Xu(徐军) Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals 2020 Chin. Phys. B 29 087201

[1] Higashiwaki M, Sasaki K, Murakami H, Kumagai Y, Koukitu A, Kuramata A, Masui T and Yamakoshi S 2016 Semicond. Sci. Tech. 31 034001
[2] Oh S, Jung Y, Mastro M A, Hite, J K, Eddy C R and Kim J 2015 Opt. Express 23 28300
[3] Lu X, Zhou L, Chen L, Ouyang X, Liu B, Xu J and Tang H 2018 Appl. Phys. Lett. 112 103502
[4] Tippins H H 1965 Phys. Rev. 140 A316
[5] Stepanov S, Nikolaev V, Bougrov V and Romanov A 2016 Rev. Adv. Mater. Sci. 44 63
[6] He H, Orlando R, Blanco M A, Pandey R, Amzallag E, Baraille I and Rérat M 2006 Phys. Rev. B 74 195123
[7] Higashiwaki M, Sasaki K, Kamimura T, Hoi Wong M, Krishnamurthy D, Kuramata A, Masui T and Yamakoshi S 2013 Appl. Phys. Lett. 103 123511
[8] Yan X, Esqueda I S, Ma J, Tice J and Wang H 2018 Appl. Phys. Lett. 112 032101
[9] Roy R, Hill V G and Osborn E F 1952 J. Am. Chem. Soc. 74 719
[10] Galazka Z, Uecker R, Irmscher K, Albrecht M, Klimm D, Pietsch M, Brützam M, Bertram R, Ganschow S and Fornari R 2010 Cryst. Res. Technol. 45 1229
[11] Víllora E G, Shimamura K, Yoshikawa Y, Aoki K and Ichinose N 2004 J. Cryst. Growth 270 420
[12] Kuramata A, Koshi K, Watanabe S, Yamaoka Y, Masui T and Yamakoshi S 2016 Jpn. J. Appl. Phys. 55 1202A2
[13] Zhang Z, Farzana E, Arehart A R and Ringel S A 2016 Appl. Phys. Lett. 108 052105
[14] Green A J, Chabak K D, Heller E R, Fitch R C, Baldini M, Fiedler A, Irmscher K, Wagner G, Galazka Z, Tetlak S E and Crespo A 2016 IEEE Electr. Device Lett. 37 902
[15] Wong M H, Sasaki K, Kuramata A, Yamakoshi S and Higashiwaki M 2015 IEEE Electr. Device Lett. 37 212
[16] Tang H, He N, Zhang H, Liu B, Zhu Z, Xu M, Chen L, Liu J, Ouyang X and Xu J 2020 CrystEngComm 22 924
[17] Onuma T, Fujioka S, Yamaguchi T, Higashiwaki M, Sasaki K, Masui T and Honda T 2013 Appl. Phys. Lett. 103 041910
[18] Irmscher K, Galazka Z, Pietsch M, Uecker R and Fornari R 2011 J. Appl. Phys. 110 063720
[19] Galazka Z, Irmscher K, Uecker R, Bertram R, Pietsch M, Kwasniewski A, Naumann M, Schulz T, Schewski R, Klimm D and Bickermann M 2014 J. Cryst. Growth 404 184
[20] Suzuki N, Ohira S, Tanaka M, Sugawara T, Nakajima K and Shishido T 2007 Phys. Status Solidi C 4 2310
[21] Wong M H, Sasaki K, Kuramata A, Yamakoshi S and Higashiwaki M 2015 Appl. Phys. Lett. 106 032105
[22] Polyakov A Y, Smirnov N B, Shchemerov I V, Pearton S J, Ren F, Chernykh A V and Kochkova A I 2018 Appl. Phys. Lett. 113 142102
[23] Ingebrigtsen M E, Varley J B, Kuznetsov A Y Svensson B G, Alfieri G, Mihaila A, Badstübner U and Vines L 2018 Appl. Phys. Lett. 112 042104
[24] Islam M M, Rana D, Hernandez A, Haseman M and Selim F A 2019 J. Appl. Phys. 125 055701
[25] Neal A T, Mou S, Rafique S, Rafique S, Zhao H, Ahmadi E, Speck J S, Stevens K T, Blevins J D, Thomson D B, Moser N and Chabak K D 2018 Appl. Phys. Lett. 113 062101
[26] He H, Li W, Xing H Z and Liang E J 2012 Adv. Mater. Res. 535 36
[27] Ricci F, Boschi F, Baraldi A, Filippetti A, Higashiwaki M, Kuramata A, Fiorentini V, Fornari and R 2016 J. Phys.:Condens. Matter 28 224005
[28] Hrivnák L 1987 J. Appl. Phys. 62 3228
[29] Fornari R and Kumar J 1990 Appl. Phys. Lett. 56 638
[30] Lenyk C A, Gustafson T D, Halliburton L E and Giles N C 2019 J. Appl. Phys. 126 245701
[31] Santia M D, Tandon N and Albrecht J D 2015 Appl. Phys. Lett. 107 041907
[32] Guo Z, Verma A, Wu X, Sun F, Hickman A, Masui T, Kuramata A, Higashiwaki M, Jena D and Luo T 2015 Appl. Phys. Lett. 106 111909
[33] Slomski M, Blumenschein N, Paskov P P, Muth J F and Paskova T 2017 J. Appl. Phys. 121 235104
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