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Chin. Phys. B, 2020, Vol. 29(3): 037101    DOI: 10.1088/1674-1056/ab696e
Special Issue: SPECIAL TOPIC — Topological semimetals
SPECIAL TOPIC—Topological semimetals Prev   Next  

Single crystal growth, structural and transport properties of bad metal RhSb2

D S Wu(吴德胜)1,2, Y T Qian(钱玉婷)1,2, Z Y Liu(刘子懿)1,2, W Wu(吴伟)1,2, Y J Li(李延杰)1,2, S H Na(那世航)1,2, Y T Shao(邵钰婷)1,2, P Zheng(郑萍)1,2, G Li(李岗)1,2,3, J G Cheng(程金光)1,2,3, H M Weng(翁红明)1,2,3, J L Luo(雒建林)1,2,3
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China
Abstract  We have successfully grown an arsenopyrite marcasite type RhSb2 single crystal, and systematically investigated its crystal structure, electrical transport, magnetic susceptibility, heat capacity, and thermodynamic properties. We found that the temperature-dependent resistivity exhibits a bad metal behavior with a board peak around 200 K. The magnetic susceptibility of RhSb2 shows diamagnetism from 300 K to 2 K. The low-temperature specific heat shows a metallic behavior with a quite small electronic specific-heat coefficient. No phase transition is observed in both specific heat and magnetic susceptibility data. The Hall resistivity measurements show that the conduction carriers are dominated by electrons with ne = 8.62×1018 cm-3 at 2 K, and the electron carrier density increases rapidly above 200 K without change sign. Combining with ab-initio band structure calculations, we showed that the unusual peak around 200 K in resistivity is related to the distinct electronic structure of RhSb2. In addition, a large thermopower S(T) about -140 μV/K is observed around 200 K, which might be useful for future thermoelectric applications.
Keywords:  single crystal growth      ab-initio band calculations      susceptibility      heat capacity      thermodynamic transport properties  
Received:  09 December 2019      Revised:  02 January 2020      Published:  05 March 2020
PACS:  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  71.20.-b (Electron density of states and band structure of crystalline solids)  
  52.25.Fi (Transport properties)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11674375, 11634015, 11925408, and 11674369), the National Basic Research Program of China (Grant Nos. 2016YFA0300600, 2016YFA030240, 2017YFA0302901, and 2018YFA0305700), the Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-SLH013, XDB28000000, and XXH13506-202), the Science Challenge Project of China (Grant No. TZ2016004), the K. C. Wong Education Foundation, China (Grant No. GJTD-2018-01), the Beijing Natural Science Foundation, China (Grant No. Z180008), and the Beijing Municipal Science and Technology Commission, China (Grant No. Z181100004218001).
Corresponding Authors:  J L Luo     E-mail:  jlluo@iphy.ac.cn

Cite this article: 

D S Wu(吴德胜), Y T Qian(钱玉婷), Z Y Liu(刘子懿), W Wu(吴伟), Y J Li(李延杰), S H Na(那世航), Y T Shao(邵钰婷), P Zheng(郑萍), G Li(李岗), J G Cheng(程金光), H M Weng(翁红明), J L Luo(雒建林) Single crystal growth, structural and transport properties of bad metal RhSb2 2020 Chin. Phys. B 29 037101

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