Please wait a minute...
Chin. Phys. B, 2019, Vol. 28(8): 087501    DOI: 10.1088/1674-1056/28/8/087501
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Model of output characteristics of giant magnetoresistance (GMR) multilayer sensor

Jiao-Feng Zhang(张教凤)1, Zheng-Hong Qian(钱正洪)1,2, Hua-Chen Zhu(朱华辰)2, Ru Bai(白茹)2, Jian-Guo Zhu(朱建国)1
1 School of Materials Science and Engineering, Sichuan University, Chengdu 610041, China;
2 Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
Abstract  In this paper, the giant magnetoresistance (GMR) multilayer sensor is fabricated with a Wheatstone bridge, and it exhibits excellent performance with a sensitivity of 2.8349 mV/(V/Oe) (1 Oe=79.5775 A·m-1) and a saturation field of 26 Oe along the sensitive axis. The GMR sensor is also characterized in a high magnetic field. The sensitivity decreases from 2.8349 mV/(V/Oe) at an angle of 0° to 0.0175 mV/(V/Oe) at an angle of 90°. Then, the sensor is placed in a series of rotating magnetic fields. We propose a model to express the output characteristics of the GMR multilayer sensor. The transfer curves of the sensor can be shown as two exactly symmetrical circles with an increasing radius when the magnetic field increases. The experimental results are consistent with the simulation results of the model. The advantage of this model is that it is simpler and more intuitive.
Keywords:  giant magnetoresistance      sensor phenomena and characterization      angular dependence  
Received:  19 February 2019      Revised:  22 May 2019      Accepted manuscript online: 
PACS:  75.47.De (Giant magnetoresistance)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  72.15.Gd (Galvanomagnetic and other magnetotransport effects)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFF01010701), the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ17F010004), and the National Natural Science Foundation of China (Grant No. 61741506).
Corresponding Authors:  Zheng-Hong Qian     E-mail:  zqian@hdu.edu.cn

Cite this article: 

Jiao-Feng Zhang(张教凤), Zheng-Hong Qian(钱正洪), Hua-Chen Zhu(朱华辰), Ru Bai(白茹), Jian-Guo Zhu(朱建国) Model of output characteristics of giant magnetoresistance (GMR) multilayer sensor 2019 Chin. Phys. B 28 087501

[36] Taniguchi T and Imamura H 2011 Phys. Rev. B 83 054432
[1] Daughton J, Brown J, Chen E, Beech R, Pohm A and Kude W 1994 IEEE Trans. Magn. 30 4608
[37] Wang K, Zhang S and Levy P M 1996 Phys. Rev. B 54 11965
[2] Ene C B, Schmitz G, Kirchheim R and Andreas Hütten 2005 Acta Mater. 53 3383
[38] Miller B H, Chen E Y and Dahlberg E D 1993 J. Appl. Phys. 73 6384
[3] Li J, Qian Z, Sun Y, Bai R and Zhu J 2013 IEEE Sens. J. 13 4944
[39] Vedyayev A, Dieny, Ryzhanova N, Genin J and Cowache C 1994 Epl. 25 465
[4] Kuru H, Kockar H and Alper M 2017 J. Magn. Magn. Mater. 444 132
[40] Zhu H, Qian Z and Huang C 2011 1st Int. Symp. Spintronic Devices Commercialization (ISSDC) October 21-24, 2010, Beijing, p. 263
[5] Lu S, Shang J X and Zhang Y 2007 Chin. Phys. Lett. 24 3229
[41] Sun Y C, Qian Z H, Bai R and Zhu H C 2013 Adv. Mater. Res. 662 746
[6] Li S T, Liu X, Shi W K, Cao J W, Wei F L and Wei D 2009 Chin. Phys. B 18 1643
[42] Cubells-Beltrán María-Dolores, Reig Cándid, Jordi M, Joana S and Susana C 2016 Sensors 16 939
[7] Tao X and Xia K 2011 Acta Phys. Sin. 60 127202 (in Chinese)
[43] Du Y and Pong P W T 2016 5th International Symposium on NexGeneration Electron (ISNE), May 4-6, 2016, Hsinchu, Taiwan, p. 2
[8] Zhou S M and Chen F L 2012 Chin. Phys. Lett. 29 047501
[9] Pang Z Y, Chen Y X, Liu T T, Zhang Y P, Xie S J, Yan S S and Han S H 2006 Chin. Phys. Lett. 23 1566
[10] Wang G H, Hang Z D, Xuan H C, Mang S C, Cheng S Y, Zhang C L ang Du Y W 2013 Chin. Phys. B 22 77506
[11] Tong P, Wang B S and Sun Y P 2013 Chin. Phys. B 22 67501
[12] Sun J F, Xing D W and Zhang S L 2010 Chin. Phys. B 19 77502
[13] Bai R, Qian Z H, Zhu H C, Li Q L, Li Y, Peng Y Z and Huo D X 2016 IEEE Trans. Magn. 53 1
[14] Cubells-Beltran María Dolores, Reig C and Munoz Diego Ramírez 2009 IEEE Sens. J. 9 1756
[15] Reig C, María-Dolores Cubells-Beltran and Diego Ramírez Muñoz 2009 Sensors 9 7919
[16] Kang W, Ran Y, Lv W, Zhang Y and Zhao A 2017 IEEE Magn. Lett. 7 1
[17] Jaiswal A, Chakraborty I and Roy K 2017 IEEE Magn. Lett. 8 1
[18] Qian L J, Hu J G and Xu X Y 2009 Chin. Phys. B 18 2589
[19] Li S T, Liu X, Shi W K, Cao J L, Wei F L and Wei D 2009 Chin. Phys. B 18 1643
[20] Smith N, Zeltser A M and Parker M R 1996 IEEE Trans. Magn. 32 135
[21] Djamal M and Ramli 2012 Procedia Eng. 32 60
[22] Lisa L, Daniel K, Rahel K, Johannes R, Piriya T and Anja W 2015 Sensors 15 28665
[23] Reig C and María-Dolores Cubells-Beltrán 2016 High Sensitivity Magnetometers 2nd edn. (Berlin, Germany: Springer) pp. 225-252
[24] Yan S, Cao Z, Guo Z, Zhenyi Z, Anni C and Yue Q 2018 Sensors 18 1832
[25] Qian Z, Wang D, Daughton J M, Tondra M, Nordman M and Popple A 2004 IEEE Trans. Magn. 40 2643
[26] Nakatani T, Li S, Sakuraba Y, Furubayashi T and Hono K 2018 IEEE Trans. Magn. 54 1
[27] Lacour D, Katine J A, Smith N and Carey M J 2004 Appl. Phys. Lett. 85 4681
[28] Lenz J and Edelstein A S 2006 IEEE Sens. J. 6 631
[29] Li X, Zhou Y, Zheng C, Chan P H, Chan M and Pong P W T 2016 Appl. Phys. Lett. 109 192402
[30] Wu S B, Chen S, Li H and Yang X F 2012 Acta Phys. Sin. 61 97504 (in Chinese)
[31] Qian L J, Xu X Y and Hu J G 2009 J. Funct. Mater. Dev. 18 2589
[32] Kang M H, Choi B W, Koh K C, Lee J H and Park G T 2005 Sens. Actuator A-Phys. 118 278
[33] Zhang S, Levy P M and Fert A 1992 Physica B 45 8689
[34] Camley R E and Barnas J 1989 Phys. Rev. Lett. 63 664
[35] Parent F, Tuaillon J, Stern L B, Dupuis V, Prevel B, Perez A, Melinon P, Guiraud G, Morel R, Barthélémy A and Fert A 1997 Phys. Rev. B 55 3683
[36] Taniguchi T and Imamura H 2011 Phys. Rev. B 83 054432
[37] Wang K, Zhang S and Levy P M 1996 Phys. Rev. B 54 11965
[38] Miller B H, Chen E Y and Dahlberg E D 1993 J. Appl. Phys. 73 6384
[39] Vedyayev A, Dieny, Ryzhanova N, Genin J and Cowache C 1994 Epl. 25 465
[40] Zhu H, Qian Z and Huang C 2011 1st Int. Symp. Spintronic Devices Commercialization (ISSDC) October 21-24, 2010, Beijing, p. 263
[41] Sun Y C, Qian Z H, Bai R and Zhu H C 2013 Adv. Mater. Res. 662 746
[42] Cubells-Beltrán María-Dolores, Reig Cándid, Jordi M, Joana S and Susana C 2016 Sensors 16 939
[43] Du Y and Pong P W T 2016 5th International Symposium on NexGeneration Electron (ISNE), May 4-6, 2016, Hsinchu, Taiwan, p. 2
[1] Ultralow detection limit of giant magnetoresistance biosensor using Fe3O4-graphene composite nanoparticle label
Jie Xu(徐洁), Ji-qing Jiao(焦吉庆), Qiang Li(李强), Shan-dong Li(李山东). Chin. Phys. B, 2017, 26(1): 010701.
[2] Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes
Luping Liu(刘鲁萍), Qingfeng Zhan(詹清峰), Xin Rong(荣欣), Huali Yang(杨华礼), Yali Xie(谢亚丽), Xiaohua Tan(谭晓华), Run-wei Li(李润伟). Chin. Phys. B, 2016, 25(7): 077307.
[3] Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions
Hossein Karbaschi, Gholam Reza Rashedi. Chin. Phys. B, 2015, 24(4): 047305.
[4] Types of the jump phenomenon in the angular dependence of the noncollinear exchange bias
Yang Hong-Ping, Bai Yu-Hao. Chin. Phys. B, 2014, 23(6): 067503.
[5] Mn-based antiperovskite functional materials: Review of research
Tong Peng, Wang Bo-Sen, Sun Yu-Ping. Chin. Phys. B, 2013, 22(6): 067501.
[6] Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells
Qin Jun-Rui,Chen Shu-Ming,Liang Bin,Liu Bi-Wei. Chin. Phys. B, 2012, 21(2): 029401.
[7] Spin-dependent transport induced by magnetization in zigzag graphene nanoribbons coupled to one-dimensional leads
Zhao Hua, Zhang Xiao-Wei, Cai Tuo, Sang Tian, Liu Xiao-Chun, Liu Fang. Chin. Phys. B, 2012, 21(1): 017305.
[8] Simultaneous observation of positive and negative giant magnetoresistances in composite (La0.83Sr0.17MnO3)1-x(ITO)x
Wang Miao, Zhang Ning. Chin. Phys. B, 2006, 15(4): 850-853.
[9] Giant magnetoresistance in Y0.9La0.1Mn6Sn6 compound
Yao Jin-Lei, Wang Ru-Wu, Yang De-Ren, Yan Mi, Zhang Li-Gang. Chin. Phys. B, 2004, 13(4): 542-545.
[10] Magnetic behaviour investigation on symmetric spin valves of Co/Cu/NiFe and NiFe/Cu/Co
Li Tie, Shen Hong-Lie. Chin. Phys. B, 2002, 11(1): 54-57.
No Suggested Reading articles found!