Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

doi:10.1088/1674-1056/27/8/088504

Abstract

In this study, an InGaN lighting-emitting diode (LED) containing GaN/AlGaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or AlGaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.

Keywords: lighting-emitting diode gallium nitride efficiency droop triangular barrier

Received: 10 April 2018
Revised: 18 May 2018
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))

Fund:

Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61404114, 61504119, and 11004170), the China Postdoctoral Science Foundation (Grant No. 2017M611923), and the Jiangsu Planned Projects for Postdoctoral Research Funds, China (Grant No. 1701067B).

Corresponding Authors: Li-Wen Cheng, Zai-Quan Xu
E-mail: lwcheng@yzu.edu.cn;zaiquan.xu@uts.edu.au

Cite this article:

Li-Wen Cheng(程立文), Jian Ma(马剑), Chang-Rui Cao(曹常锐), Zuo-Zheng Xu(徐作政), Tian Lan(兰天), Jin-Peng Yang(杨金彭), Hai-Tao Chen(陈海涛), Hong-Yan Yu(于洪岩), Shu-Dong Wu(吴曙东), Shun Yao(尧舜), Xiang-Hua Zeng(曾祥华), Zai-Quan Xu(徐仔全) Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers 2018 Chin. Phys. B 27 088504

[1]	Krames M R, Shchekin O B, Mueller-Mach R, Mueller G O, Zhou L, Harbers G and Craford M G 2007 J. Disp. Technol. 3 160
[2]	Dhanabalan S C, Ponraj J S, Guo Z, Li S, Bao Q and Zhang H 2017 Adv. Sci. 4 1600305
[3]	Ponraj J S, Xu Z Q , Dhanabalan S C, Mu H, Wang Y, Yuan J, Li P, Thakur S, Ashrafi M, Mccoubrey K, Zhang Y, Li S, Zhang H and Bao Q 2016 Nanotechnology 27 462001
[4]	Dhanabalan S C, Ponraj J S, Zhang H and Bao Q 2016 Nanoscale 8 6410
[5]	Piprek J 2010 Phys. Status Solidi A 207 2217
[6]	Ivel, J, Martinelli L, Peretti J, Speck J S and Weisbuch C 2013 Phys. Rev. Lett. 110 177406
[7]	Xu J, Schubert M F, Noemaun A N, Zhu D, Kim J K, Schubert E F, Park Y, et al. 2009 Appl. Phys. Lett. 94 011113
[8]	Zhao H, Liu G, Zhang J, Arif R A and Tansu N 2013 J. Disp. Technol. 9 212
[9]	Kuo Y K, Horng S H, Tsai, M C, Yen S H and Chang S H 2010 Opt. Commun. 283 3698
[10]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
[11]	Xie J, Ni X, Fan Q, Shimada R, Özgür Ü and Morkoç H 2008 Appl. Phys. Lett. 93 121107
[12]	Ni X, Fan Q, Shimada R, Özgür Ü and Morkoç H 2008 Appl. Phys. Lett. 93 171113
[13]	Wang C H, Chang S P, Chang W T, Li J C, Lu Y S, Li Z Y and Wang S C 2010 Appl. Phys. Lett. 97 181101
[14]	Chang J Y, Tsai M C and Kuo Y K 2010 Opt. Lett. 35 1368
[15]	Kim K S, Kim J H, Jung S J, Park Y J and Cho S N 2010 Appl. Phys. Lett. 96 091104
[16]	Zhang Y Y and Yin A Y 2011 Appl. Phys. Lett. 99 221103
[17]	Gong C C, Fan G H, Zhang Y Y, Xu Y Q, Liu X P, Zheng S W, Yao G R and Zhou D T 2012 Chin. Phys. B 21 068505
[18]	Gorai A, Panda S and Biswas D 2017 Optik 140 665
[19]	Kuo Y K, Chang J Y, Tsai M C and Yen S H 2009 Appl. Phys. Lett. 95 011116
[20]	APSYS by Crosslight Software Inc Burnaby Canada (http://www.crosslight.com)
[21]	Cheng L, Wu S, Xia C and Chen H 2015 J. Appl. Phys. 118 103103
[22]	Cheng L and Wu S 2014 IEEE J. Quantum Electron. 50 261

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Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

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