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Chin. Phys. B, 2018, Vol. 27(8): 088504    DOI: 10.1088/1674-1056/27/8/088504
Special Issue: SPECIAL TOPIC — Nanophotonics
SPECIAL TOPIC—Nanophotonics Prev   Next  

Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers

Li-Wen Cheng(程立文)1,4, Jian Ma(马剑)1, Chang-Rui Cao(曹常锐)1, Zuo-Zheng Xu(徐作政)1, Tian Lan(兰天)2, Jin-Peng Yang(杨金彭)1, Hai-Tao Chen(陈海涛)1, Hong-Yan Yu(于洪岩)2, Shu-Dong Wu(吴曙东)1, Shun Yao(尧舜)3, Xiang-Hua Zeng(曾祥华)1, Zai-Quan Xu(徐仔全)5
1 College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China;
2 Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
3 Sino-Semiconductors Technologies Co., Ltd., Taizhou 225300, China;
4 Jiangsu Kinzo Opto-electronic Instrument Co., Ltd., Yangzhou 225100, China;
5 School of Mathematical and Physical Sciences, University of Technology Sydney, 15 Broadway, Ultimo NSW 2007, Australia
Abstract  

In this study, an InGaN lighting-emitting diode (LED) containing GaN/AlGaN/GaN triangular barriers is proposed and investigated numerically. The simulation results of output performance, carrier concentration, and radiative recombination rate indicate that the proposed LED has a higher output power and an internal quantum efficiency, and a lower efficiency droop than the LED containing conventional GaN or AlGaN barriers. These improvements mainly arise from the modified energy bands, which is evidenced by analyzing the LED energy band diagram and electrostatic field near the active region. The modified energy bands effectively improve carrier injection and confinement, which significantly reduces electron leakage and increases the rate of radiative recombination in the quantum wells.

Keywords:  lighting-emitting diode      gallium nitride      efficiency droop      triangular barrier  
Received:  10 April 2018      Revised:  18 May 2018      Published:  05 August 2018
PACS:  85.60.Jb (Light-emitting devices)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))  
Fund: 

Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61404114, 61504119, and 11004170), the China Postdoctoral Science Foundation (Grant No. 2017M611923), and the Jiangsu Planned Projects for Postdoctoral Research Funds, China (Grant No. 1701067B).

Corresponding Authors:  Li-Wen Cheng, Zai-Quan Xu     E-mail:  lwcheng@yzu.edu.cn;zaiquan.xu@uts.edu.au

Cite this article: 

Li-Wen Cheng(程立文), Jian Ma(马剑), Chang-Rui Cao(曹常锐), Zuo-Zheng Xu(徐作政), Tian Lan(兰天), Jin-Peng Yang(杨金彭), Hai-Tao Chen(陈海涛), Hong-Yan Yu(于洪岩), Shu-Dong Wu(吴曙东), Shun Yao(尧舜), Xiang-Hua Zeng(曾祥华), Zai-Quan Xu(徐仔全) Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers 2018 Chin. Phys. B 27 088504

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