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Chin. Phys. B, 2018, Vol. 27(10): 108502    DOI: 10.1088/1674-1056/27/10/108502

Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile

Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪)
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China

A new 4H-SiC light triggered thyristor (LTT) with 7-shaped thin n-base doping profile is proposed and simulated using a two-dimensional numerical method. In this new structure, the bottom region of the thin n-base has a graded doping profile to induce an accelerating electric field and compensate for the shortcoming of the double-layer thin n-base structure in transmitting injected holes. In addition, the accelerating electric field can also speed up the transmission of photon-generated carriers during light triggering. As a result, the current gain of the top pnp transistor of the SiC LTT is further increased. According to the TCAD simulations, the turn-on delay time of the SiC LTT decreases by about 91.5% compared with that of previous double-layer thin n-base SiC LTT. The minimum turn-on delay time of the SiC LTT is only 828 ns, when triggered by 100 mW/cm2 ultraviolet light. Meanwhile, there is only a slight degradation in the forward blocking characteristic.

Keywords:  silicon carbide      light triggered thyristor      7-shaped doping profile      turn-on delay  
Received:  30 April 2018      Revised:  29 June 2018      Accepted manuscript online: 
PACS:  85.30.Rs (Thyristors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  02.60.Cb (Numerical simulation; solution of equations)  

Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Corresponding Authors:  Hong-Bin Pu     E-mail:

Cite this article: 

Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪) Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile 2018 Chin. Phys. B 27 108502

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