Please wait a minute...
Chin. Phys. B, 2017, Vol. 26(7): 078102    DOI: 10.1088/1674-1056/26/7/078102
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Zesheng Ji(吉泽生)1, Lianshan Wang(汪连山)1,2, Guijuan Zhao(赵桂娟)1, Yulin Meng(孟钰淋)1, Fangzheng Li(李方政)1, Huijie Li(李辉杰)1, Shaoyan Yang(杨少延)1, Zhanguo Wang(王占国)1
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  We report the growth of AlN epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (MOCVD). The sources of trimethylaluminium (TMAl) and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of AlN epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction (HRXRD) measurement showed that the full width at half maximum (FWHM) of the (0002) and (10-12) reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square (RMS) roughness was lower to 0.2 nm as tested by atomic force microscope (AFM). The growth process of AlN epilayers was discussed in terms of crystalline quality, surface morphology, and residual stress.
Keywords:  pulsed metal organic chemical vapor deposition      growth mode      morphology      crystalline quality  
Received:  26 January 2017      Revised:  17 March 2017      Published:  05 July 2017
PACS:  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No.2015AA016801) and Guangdong Provincial Scientific and Technologic Planning Program,China (Grant No.2014B010119002).
Corresponding Authors:  Lianshan Wang     E-mail:  ls-wang@semi.ac.cn

Cite this article: 

Zesheng Ji(吉泽生), Lianshan Wang(汪连山), Guijuan Zhao(赵桂娟), Yulin Meng(孟钰淋), Fangzheng Li(李方政), Huijie Li(李辉杰), Shaoyan Yang(杨少延), Zhanguo Wang(王占国) Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 2017 Chin. Phys. B 26 078102

[1] Collazo R, Mita S, J Xie, Rice A, Tweedie J, Dalmau R and Sitar Z 2011 Physica Status Solidi 8 2031
[2] J Xie, Mita S, Bryan Z, W Guo, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M and Collazo R 2013 Appl. Phys. Lett. 102 171102
[3] Taniyasu Y, Kasu M and Makimoto T 2006 Nature 441 325
[4] C Ren, S Zhong, Y Li, Z Li, Y Kong and T Chen 2016 Journal of Semiconductors 37 084002
[5] X Sun, D Li, Y Chen, H Song, H Jiang, Z Li, G Miao and Z Zhang 2013 Crystengcomm 15 6066
[6] Creighton J R, Wang G T, Breiland W G and Coltrin M E 2004 Journal of Crystal Growth 261 204
[7] Suda J, Noriojima, Kimoto T and Matsunami H 2003 MRS Online Proceeding Library 798
[8] B Daudin, G Feuillet, G Mula, H Mariette, J L Rouviére and N Pelekanos 1999 Physica Status Solidi 176 621
[9] Dauelsberg M, Brien D, Rauf H, Reiher F, Baumgartl J, Hberlen O, Segal A S, Lobanova A V, Yakovlev E V and Talalaev R A 2014 Journal of Crystal Growth 393 103
[10] Hsu K Y, Chung H C, Liu C P and Tu L W 2007 Appl. Phys. Lett. 90 211902
[11] Sun X, Li D, Chen Y, Song H, Jiang H, Li Z, Miao G and Zhang Z 2013 CrystEngComm 15 6066
[12] Takano K, Saito Y and Pierre-Louis O 2010 Phys. Rev. B 82 2195
[13] Mihopoulos T G, Gupta V and Jensen K F 1998 Journal of Crystal Growth 195 733
[14] Breiland W G and Killeen K P 1995 J. Appl. Phys. 78 6726
[15] Gherasoiu I, Nikishin S, Kipshidze G, Borisov B, Chadolu A, Ramkumar C, Holtz M and Temkin H 2004 J. Appl. Phys. 96 6272
[16] Huang W C, Chu C M, Wong Y Y, Chen K W, Lin Y K, Wu C H, Lee W I and Chang E Y 2016 Mater. Sci. Semicond. Process 45 1
[17] Heinke H, Kirchner V, Einfeldt S and Hommel D 2000 Appl. Phys. Lett. 77 2145
[18] Dumn C G and Koch E F 1957 Acta Metall 5 548
[19] Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P and Evarestov R A 1998 Phys. Rev. B 58 12899
[20] Sarua A, Kuball M and Van J E 2002 Appl. Phys. Lett. 81 1426
[21] Trodahl H J, Martin F, Muralt P and Setter N 2006 Appl. Phys. Lett. 89 3498
[22] Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R and Sitar Z 2016 Journal of Crystal Growth 438 81
[23] Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J P, Collazo R and Sitar Z 2016 Journal of Crystal Growth 451 65
[24] Wang T Y, Liang J H, Fu G W and Wuu D S 2016 CrystEngComm 18 9152
[25] Tersoff J, Phang Y H, Zhang Z and Lagally M G 1995 Phys. Rev. Lett. 75 2730
[1] Close-coupled nozzle atomization integral simulation and powder preparation using vacuum induction gas atomization technology
Peng Wang(汪鹏), Jing Li(李静), Xin Wang(王欣), Heng-San Liu(刘恒三), Bin Fan(范斌), Ping Gan(甘萍), Rui-Feng Guo(郭瑞峰), Xue-Yuan Ge(葛学元), and Miao-Hui Wang(王淼辉). Chin. Phys. B, 2021, 30(2): 027502.
[2] Multi-phase-field simulation of austenite peritectic solidification based on a ferrite grain
Chao Yang(杨超), Jing Wang(王静), Junsheng Wang(王俊升), Yu Liu(刘瑜), Guomin Han(韩国民), Haifeng Song(宋海峰), and Houbing Huang(黄厚兵). Chin. Phys. B, 2021, 30(1): 018201.
[3] Regulation mechanism of catalyst structure on diamond crystal morphology under HPHT process
Ya-Dong Li(李亚东), Yong-Shan Cheng(程永珊), Meng-Jie Su(宿梦洁), Qi-Fu Ran(冉启甫), Chun-Xiao Wang(王春晓), Hong-An Ma(马红安), Chao Fang(房超), Liang-Chao Chen(陈良超). Chin. Phys. B, 2020, 29(7): 078101.
[4] Influence of N+ implantation on structure, morphology, and corrosion behavior of Al in NaCl solution
Hadi Savaloni, Rezvan Karami, Helma Sadat Bahari, Fateme Abdi. Chin. Phys. B, 2020, 29(5): 058102.
[5] Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films
Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成). Chin. Phys. B, 2020, 29(3): 038102.
[6] Influence of Zr50Cu50 thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films
Bao-Qing Zhang(张宝庆), Gao-Peng Liu(刘高鹏), Hai-Tao Zong(宗海涛), Li-Ge Fu(付丽歌), Zhi-Fei Wei(魏志飞), Xiao-Wei Yang(杨晓炜), Guo-Hua Cao(曹国华). Chin. Phys. B, 2020, 29(3): 037303.
[7] Energy stored in nanoscale water capillary bridges formed between chemically heterogeneous surfaces with circular patches
Bin-Ze Tang(唐宾泽), Xue-Jia Yu(余雪佳), Sergey V. Buldyrev, Nicolas Giovambattista§, and Li-Mei Xu(徐莉梅)¶. Chin. Phys. B, 2020, 29(11): 114703.
[8] Exploring alkylthiol additives in PBDB-T:ITIC blended active layers for solar cell applications
Xiang Li(李想), Zhiqun He(何志群), Mengjie Sun(孙盟杰), Huimin Zhang(张慧敏), Zebang Guo(郭泽邦), Yajun Xu(许亚军), Han Li(李瀚), Chunjun Liang(梁春军), Xiping Jing(荆西平). Chin. Phys. B, 2019, 28(8): 088802.
[9] Time-resolved shadowgraphs and morphology analyses of aluminum ablation with multiple femtosecond laser pulses
Zehua Wu(吴泽华), Nan Zhang(张楠), Xiaonong Zhu(朱晓农), Liqun An(安力群), Gangzhi Wang(王刚志), Ming Tan(谭明). Chin. Phys. B, 2018, 27(7): 077901.
[10] Self-assembled monolayer modified copper(I) iodide hole transport layer for efficient polymer solar cells
Yuancong Zhong(钟远聪), Qilun Zhang(张琪伦), You Wei(魏优), Qi Li(李琦), Yong Zhang(章勇). Chin. Phys. B, 2018, 27(7): 078802.
[11] Fabrication of mixed perovskite organic cation thin films via controllable cation exchange
Yu-Long Zhao(赵宇龙), Jin-Feng Wang(王进峰), Ben-Guang Zhao(赵本广), Chen-Chen Jia(贾晨晨), Jun-Peng Mou(牟俊朋), Lei Zhu(朱磊), Jian Song(宋健), Xiu-Quan Gu(顾修全), Ying-Huai Qiang(强颖怀). Chin. Phys. B, 2018, 27(2): 024208.
[12] An infrared and visible image fusion method based uponmulti-scale and top-hat transforms
Gui-Qing He(何贵青), Qi-Qi Zhang(张琪琦), Jia-Qi Ji(纪佳琪), Dan-Dan Dong(董丹丹), Hai-Xi Zhang(张海曦), Jun Wang(王珺). Chin. Phys. B, 2018, 27(11): 118706.
[13] Shape controllable synthesis and enhanced upconversion photoluminescence of β-NaGdF4:Yb3+, Er3+ nanocrystals by introducing Mg2+
Yong-Xin Yang(杨永馨), Zheng Xu(徐征), Su-Ling Zhao(赵谡玲), Zhi-Qin Liang(梁志琴), Wei Zhu(朱薇), Jun-Jie Zhang(张俊杰). Chin. Phys. B, 2017, 26(8): 087801.
[14] Nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition
He-Ju Xu(许贺菊), Jian-Song Mi(米建松), Yun Li(李云), Bin Zhang(张彬), Ri-Dong Cong(丛日东), Guang-Sheng Fu(傅广生), Wei Yu(于威). Chin. Phys. B, 2017, 26(12): 128102.
[15] Importance of PbI2 morphology in two-step deposition of CH3NH3PbI3 for high-performance perovskite solar cells
Hui Wei(韦慧), Yang Tang(汤洋), Bo Feng(冯波), Hui You(尤晖). Chin. Phys. B, 2017, 26(12): 128801.
No Suggested Reading articles found!