Please wait a minute...
Chin. Phys. B, 2017, Vol. 26(5): 058102    DOI: 10.1088/1674-1056/26/5/058102
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

He Zhang(张贺)1, Shangsheng Li(李尚升)1, Taichao Su(宿太超)1, Meihua Hu(胡美华)1, Hongan Ma(马红安)2, Xiaopeng Jia(贾晓鹏)2, Yong Li(李勇)3
1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
3 School of Data Science, Tongren University, Tongren 554300, China
Abstract  

A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra (XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×105Ω·cm and 76.300 cm2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B-S doping were acquired.

Keywords:  large single crystal diamond      high pressure and high temperature      doping      electrical property  
Received:  10 December 2016      Revised:  05 February 2017      Published:  05 May 2017
PACS:  81.05.ug (Diamond)  
  07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells)  
  61.72.U- (Doping and impurity implantation)  
  73.61.-r (Electrical properties of specific thin films)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 11604246), China Postdoctor Science Foundation (Grant No. 2016M592714), Professional Practice Demonstration Base for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), the Education Department of Henan Province, China (Grant Nos. 12A430010 and 17A430020), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

Corresponding Authors:  Shangsheng Li     E-mail:  lishsh@hpu.edu.cn

Cite this article: 

He Zhang(张贺), Shangsheng Li(李尚升), Taichao Su(宿太超), Meihua Hu(胡美华), Hongan Ma(马红安), Xiaopeng Jia(贾晓鹏), Yong Li(李勇) Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature 2017 Chin. Phys. B 26 058102

[1] Luong J H, Male K B and Glennon J D 2009 Analyst 134 1965
[2] Goss J P, Eyre R J and Briddon P R 2008 Phys. Status Solidi (b) 245 1679
[3] Strong H and Chrenko R 1971 J. Phys. Chem. 75 1838
[4] Zhou L, Jia X P, Ma H A, Zheng Y J and Li Y T 2009 Chin. Phys. B 18 333
[5] Sumiya H, Toda N, Nishibayashi Y and Satoh S 1997 J. Cryst. Growth 178 485
[6] Li Y, Jia X, Hu M, Yan B, Zhou Z and Fang C 2012 J. Refract. Met. Hard Mater. 34 27
[7] Wang Q L, Lu X Y, Li L A, Cheng S H and Li H D 2010 Chin. Phys. Lett. 27 047802
[8] Li Y D, Jia X P, Yan B M, Chen N, Fang C, Li Y and Ma H A 2016 Chin. Phys. B 25 048103
[9] Fan X H, Xu B, Niu Z, Zhai T G and Tian B 2012 Chin. Phys. Lett. 29 048102
[10] Yang Y N, Zhang Z Y, Zhang F C, Dong J T, Zhao W, Zhai C X and Zhang W H 2012 Chin. Phys. Lett. 29 018103
[11] Li Y, Jia X P, Feng Y G, Fang C, Fan L J, Li Y D, Zeng X and Ma H A 2015 Chin. Phys. B 24 088104
[12] Hu X J and Li N 2013 Chin. Phys. Lett. 30 088102
[13] Zhang C M, Zheng Y B, Jiang Z G, Lv X Y, Hong X, Hu S and Liu J W 2010 Chin. Phys. Lett. 27 088103
[14] Zhang H, Li S S, Su T C, Hu M H, Li G H, Ma H A and Jia X P 2016 Chin. Phys. B 25 118104
[15] Hu M H, Bi N, Li S S, Su T C, Zhou A G, Hu Q, Jia X P and Ma H A 2015 Chin. Phys. B 24 038101
[16] Li R B, Hu X J, Shen H S and He X C 2004 Mater. Lett. 58 1835
[17] Palyanov Y N, Borzdov Y M, Khokhryakov A, Kupriyanov I and Sobolev N 2006 Earth Planet. Sci. Lett. 250 269
[18] Goss J P, Briddon P R, Jones R and Sque S 2004 Diamond Relat. Mater. 13 684
[19] Palyanov Y N, Kupriyanov I, Borzdov Y M, Sokol A and Khokhryakov A 2009 Cryst. Growth Des. 9 2922
[20] Palyanov Y N, Kupriyanov I N, Sokol A G, Khokhryakov A F and Borzdov Y M 2010 Cryst. Growth Des. 10 3169
[21] Fang C, Jia X P, Chen N, Li Y, Guo L S, Chen L C, Ma H A and Liu X B 2016 J. Cryst. Growth 436 34
[22] Nesladek M 2005 Semicond. Sci. Technol. 20 R19
[23] Nakamura T, Ohana T, Hagiwara Y and Tsubota T 2009 Phys. Chem. Chem. Phys. 11 730
[24] Hasegawa M, Takeuchi D, Yamanaka S, Ogura M, Watanabe H, Kobayashi N, Okushi H and Kajimura K 1999 Jpn. J. Appl. Phys. 38 L1519
[25] Li R B, Hu X J, Shen H S and He X C 2004 J. Mater. Sci. 39 1135
[26] Eaton S C, Anderson A B, Angus J C, Evstefeeva Y E and Pleskov Y V 2003 Diamond Relat. Mater. 12 1627
[27] Li S S, Ma H A, Li X L, Su T C, Huang G F, Li Y and Jia X P 2011 Chin. Phys. B 20 028103
[28] Zhang H, Li S S, Su T C, Hu M H, Zhou Y M, Fan H T, Gong C S, Jia X P, Ma H A and Xiao H Y 2015 Acta Phys. Sin. 64 198103 (in Chinese)
[29] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q and Jia X P 2012 Chin. Phys. B 21 098101
[30] Zhang J Q, Ma H A, Jiang Y P, Liang Z Z, Tian Y and Jia X 2007 Diamond Relat. Mater. 16 283
[31] Ma L Q, Ma H A, Xiao H Y, Li S S, Li Y and Jia X P 2010 Chin. Sci. Bull. 55 677
[32] Yan B M, Jia X P, Fang C, Chen N, Li Y D, Sun S S and Ma H A 2016 J. Refract. Met. Hard Mater. 54 309
[33] Wan S H, Wang L P and Xue Q J 2010 Electrochem. Commun. 12 61
[34] Yan B M, Jia X P, Sun S S, Fang C, Chen N, Li Y D and Ma H A 2015 J. Refract. Met. Hard Mater. 48 56
[35] Huang F L, Cao C B, Xiang X, Lv R T and Zhu H S 2004 Diamond Relat. Mater. 13 1757
[1] Enhanced spin-orbit torque efficiency in Pt100-xNix alloy based magnetic bilayer
Congli He(何聪丽), Qingqiang Chen(陈庆强), Shipeng Shen(申世鹏), Jinwu Wei(魏晋武), Hongjun Xu(许洪军), Yunchi Zhao(赵云驰), Guoqiang Yu(于国强), and Shouguo Wang(王守国). Chin. Phys. B, 2021, 30(3): 037503.
[2] Sr-doping effects on conductivity, charge transport, and ferroelectricity of Ba0.7La0.3TiO3 epitaxial thin films
Qiang Li(李强), Dao Wang(王岛), Yan Zhang(张岩), Yu-Shan Li(李育珊), Ai-Hua Zhang(张爱华), Rui-Qiang Tao(陶瑞强), Zhen Fan(樊贞), Min Zeng(曾敏), Guo-Fu Zhou(周国富), Xu-Bing Lu(陆旭兵), and Jun-Ming Liu(刘俊明). Chin. Phys. B, 2021, 30(2): 027701.
[3] Effect of pressure on the electrical properties of flexible NiPc thin films fabricated by rubbing-in technology
Khasan S Karimov, Fahmi F Muhammadsharif, Zubair Ahmad, M Muqeet Rehman, and Rashid Ali. Chin. Phys. B, 2021, 30(1): 014703.
[4] Doping effects of transition metals on the superconductivity of (Li,Fe)OHFeSe films
Dong Li(李栋), Peipei Shen(沈沛沛), Sheng Ma(马晟), Zhongxu Wei(魏忠旭), Jie Yuan(袁洁), Kui Jin(金魁), Li Yu(俞理), Fang Zhou(周放), Xiaoli Dong(董晓莉), and Zhongxian Zhao(赵忠贤). Chin. Phys. B, 2021, 30(1): 017402.
[5] Physical properties and phase diagram of NaFe1 -xVxAs
Guang-Yang Dai(代光阳), Xin He(何鑫), Zhi-Wen Li(李芷文), Chang-Ling Zhang(张昌玲), Lu-Chuan Shi(史鲁川), Run-Ze Yu(于润泽), Xian-Cheng Wang(望贤成), and Chang-Qing Jin(靳常青). Chin. Phys. B, 2021, 30(1): 017401.
[6] Utilizing of high-pressure high-temperature synthesis to enhance the thermoelectric properties of Zn0.98Al0.02O with excellent electrical properties
Qi Chen(陈启), Xinjian Li(李欣健), Yao Wang(王遥), Lijie Chang(常立杰), Jian Wang(王健), Yuewen Zhang(张跃文), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏). Chin. Phys. B, 2021, 30(1): 016202.
[7] A double-layer heating method to generate high temperature in a two-stage multi-anvil apparatus
Bo Peng(彭博), Zili Kou(寇自力), Mengxi Zhao(赵梦溪), Mingli Jiang(姜明莉), Jiawei Zhang(张佳威), Yipeng Wang(王义鹏), Lu Zhang(张陆). Chin. Phys. B, 2020, 29(9): 090703.
[8] Crystallization and characteristics of {100}-oriented diamond with CH4N2S additive under high pressure and high temperature
Yong Li(李勇), Debing Tan(谭德斌), Qiang Wang(王强), Zhengguo Xiao(肖政国), Changhai Tian(田昌海), Lin Chen(陈琳). Chin. Phys. B, 2020, 29(9): 098103.
[9] Congruent melting of tungsten phosphide at 5 GPa and 3200℃ for growing its large single crystals
Xiao-Jun Xiang(向晓君), Guo-Zhu Song(宋国柱), Xue-Feng Zhou(周雪峰), Hao Liang(梁浩), Yue Xu(徐月), Shi-Jun Qin(覃湜俊), Jun-Pu Wang(王俊普), Fang Hong(洪芳), Jian-Hong Dai(戴建红), Bo-Wen Zhou(周博文), Wen-Jia Liang(梁文嘉), Yun-Yu Yin(殷云宇), Yu-Sheng Zhao(赵予生), Fang Peng(彭放), Xiao-Hui Yu(于晓辉), Shan-Min Wang(王善民). Chin. Phys. B, 2020, 29(8): 088202.
[10] High efficiency sub-nanosecond electro-optical Q-switched laser operating at kilohertz repetition frequency
Xin Zhao(赵鑫), Zheng Song(宋政), Yuan-Ji Li(李渊骥), Jin-Xia Feng(冯晋霞), Kuan-Shou Zhang(张宽收). Chin. Phys. B, 2020, 29(8): 084205.
[11] Regulation mechanism of catalyst structure on diamond crystal morphology under HPHT process
Ya-Dong Li(李亚东), Yong-Shan Cheng(程永珊), Meng-Jie Su(宿梦洁), Qi-Fu Ran(冉启甫), Chun-Xiao Wang(王春晓), Hong-An Ma(马红安), Chao Fang(房超), Liang-Chao Chen(陈良超). Chin. Phys. B, 2020, 29(7): 078101.
[12] Highly efficient bifacial semitransparent perovskite solar cells based on molecular doping of CuSCN hole transport layer
Shixin Hou(侯世欣), Biao Shi(石标), Pengyang Wang(王鹏阳), Yucheng Li(李玉成), Jie Zhang(张杰), Peirun Chen(陈沛润), Bingbing Chen(陈兵兵), Fuhua Hou(侯福华), Qian Huang(黄茜), Yi Ding(丁毅), Yuelong Li(李跃龙), Dekun Zhang(张德坤), Shengzhi Xu(许盛之), Ying Zhao(赵颖), Xiaodan Zhang(张晓丹). Chin. Phys. B, 2020, 29(7): 078801.
[13] Gd impurity effect on the magnetic and electronic properties of hexagonal Sr ferrites: A case study by DFT
Masomeh Taghipour, Mohammad Yousefi, Reza Fazaeli, Masoud Darvishganji. Chin. Phys. B, 2020, 29(7): 077505.
[14] Effects of 3d-transition metal doping on the electronic and magnetic properties of one-dimensional diamond nanothread
Zhenzhen Miao(苗珍珍), Can Cao(曹粲), Bei Zhang(张蓓), Haiming Duan(段海明), Mengqiu Long(龙孟秋). Chin. Phys. B, 2020, 29(6): 066101.
[15] Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys
Qing-Jun Xu(徐庆君), Shi-Ying Zhang(张士英), Bin Liu(刘斌), Zhen-Hua Li(李振华), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Ke Wang(王科), Rong Zhang(张荣), You-Liao Zheng(郑有炓). Chin. Phys. B, 2020, 29(5): 058103.
No Suggested Reading articles found!