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Chin. Phys. B, 2017, Vol. 26(4): 047703    DOI: 10.1088/1674-1056/26/4/047703
Special Issue: TOPICAL REVIEW — ZnO-related materials and devices
TOPICAL REVIEW—ZnO-related materials and devices Prev   Next  

ZnO-based deep-ultraviolet light-emitting devices

Ying-Jie Lu(卢英杰)1, Zhi-Feng Shi(史志锋)1, Chong-Xin Shan(单崇新)1,2, De-Zhen Shen(申德振)2
1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
Abstract  

Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of MgxZn1-xO and BexZn1-xO alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.

Keywords:  ZnO      deep-ultraviolet light-emitting devices      MgxZn1-xO      BexZn1-xO     
Received:  22 October 2016      Published:  05 April 2017
PACS:  77.55.hf (ZnO)  
  78.45.+h (Stimulated emission)  
  78.60.Fi (Electroluminescence)  
  85.60.Jb (Light-emitting devices)  
Fund: 

Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

Corresponding Authors:  Chong-Xin Shan     E-mail:  shancx@ciomp.ac.cn

Cite this article: 

Ying-Jie Lu(卢英杰), Zhi-Feng Shi(史志锋), Chong-Xin Shan(单崇新), De-Zhen Shen(申德振) ZnO-based deep-ultraviolet light-emitting devices 2017 Chin. Phys. B 26 047703

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