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Chin. Phys. B, 2015, Vol. 24(8): 087306    DOI: 10.1088/1674-1056/24/8/087306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Lv Yuan-Jiea, Feng Zhi-Honga, Gu Guo-Donga, Yin Jia-Yuna, Fang Yu-Longa, Wang Yuan-Ganga, Tan Xina, Zhou Xing-Yea, Lin Zhao-Junb, Ji Zi-Wub, Cai Shu-Juna
a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Abstract  In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–voltage characteristics of the prepared devices with different Schottky areas, it is found that after processing the device, the polarization Coulomb field (PCF) scattering is induced and has an important influence on the two-dimensional electron gas electron mobility. Moreover, the influence of PCF scattering on the electron mobility is enhanced by reducing the AlGaN barrier thickness. This leads to the quite different variation of the electron mobility with gate bias when compared with the AlGaN barrier thickness. This mainly happens because the thinner AlGaN barrier layer suffers from a much stronger electrical field when applying a gate bias, which gives rise to a stronger converse piezoelectric effect.
Keywords:  AlGaN/AlN/GaN      barrier layer thickness      electron mobility      polarization Coulomb field scattering  
Received:  14 January 2015      Revised:  24 February 2015      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  77.22.Ej (Polarization and depolarization)  
  72.10.-d (Theory of electronic transport; scattering mechanisms)  
  73.50.Dn (Low-field transport and mobility; piezoresistance)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and11174182).
Corresponding Authors:  Feng Zhi-Hong     E-mail:  ga917vv@163.com

Cite this article: 

Lv Yuan-Jie, Feng Zhi-Hong, Gu Guo-Dong, Yin Jia-Yun, Fang Yu-Long, Wang Yuan-Gang, Tan Xin, Zhou Xing-Ye, Lin Zhao-Jun, Ji Zi-Wu, Cai Shu-Jun Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor 2015 Chin. Phys. B 24 087306

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