Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

doi:10.1088/1674-1056/24/8/087306

Abstract In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–voltage characteristics of the prepared devices with different Schottky areas, it is found that after processing the device, the polarization Coulomb field (PCF) scattering is induced and has an important influence on the two-dimensional electron gas electron mobility. Moreover, the influence of PCF scattering on the electron mobility is enhanced by reducing the AlGaN barrier thickness. This leads to the quite different variation of the electron mobility with gate bias when compared with the AlGaN barrier thickness. This mainly happens because the thinner AlGaN barrier layer suffers from a much stronger electrical field when applying a gate bias, which gives rise to a stronger converse piezoelectric effect.

Keywords: AlGaN/AlN/GaN barrier layer thickness electron mobility polarization Coulomb field scattering

Received: 14 January 2015
Revised: 24 February 2015
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	77.22.Ej	(Polarization and depolarization)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	73.50.Dn	(Low-field transport and mobility; piezoresistance)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and11174182).

Corresponding Authors: Feng Zhi-Hong
E-mail: ga917vv@163.com

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Lv Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Fang Yu-Long (房玉龙), Wang Yuan-Gang (王元刚), Tan Xin (谭鑫), Zhou Xing-Ye (周幸叶), Lin Zhao-Jun (林兆军), Ji Zi-Wu (冀子武), Cai Shu-Jun (蔡树军) Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor 2015 Chin. Phys. B 24 087306

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

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