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Chin. Phys. B, 2015, Vol. 24(10): 108506    DOI: 10.1088/1674-1056/24/10/108506
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

Chen Qing-Tao, Huang Yong-Qing, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min
Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT); State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China
Abstract  

A top-illuminated circular mesa uni-traveling-carrier photodetector (UTC-PD) is proposed in this paper. By employing Gaussian graded doping in InGaAs absorption layer and InP depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W (the external quantum efficiency of 86%) is obtained at 1550 nm with a 40-μ diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 nA and the 3-dB bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of 3 V.

Keywords:  uni-traveling-carrier photodetector      device growth and fabrication      responsivity      3-dB bandwidth     
Received:  28 April 2015      Published:  05 October 2015
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  61.05.cp (X-ray diffraction)  
  82.33.Ya (Chemistry of MOCVD and other vapor deposition methods)  
Fund: 

Project supported partially by the National Natural Science Foundation of China (Grant Nos. 61274044 and 61077049), the National Basic Research Program of China (Grant No. 2010CB327600), the Program of Key International Science and Technology Cooperation Projects, China (Grant No. 2011RR000100), the 111 Project of China (Grant No. B07005), the Specialized Research Fund for the Doctoral Program of China (Grant No. 20130005130001), and the Natural Science Foundation of Beijing, China (Grant No. 4132069).

Corresponding Authors:  Huang Yong-Qing     E-mail:  yqhuang@bupt.edu.cn

Cite this article: 

Chen Qing-Tao, Huang Yong-Qing, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity 2015 Chin. Phys. B 24 108506

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