Please wait a minute...
Chin. Phys. B, 2015, Vol. 24(4): 048504    DOI: 10.1088/1674-1056/24/4/048504

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang Zhi-Yun (江之韵), Xie Hong-Yun (谢红云), Zhang Liang-Hao (张良浩), Zhang Wan-Rong (张万荣), Hu Rui-Xin (胡瑞心), Huo Wen-Juan (霍文娟)
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Abstract  In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.
Keywords:  uni-traveling-carrier      double hetero-junction phototransistor      optical responsivity      optical transition frequency  
Received:  09 September 2014      Revised:  20 November 2014      Accepted manuscript online: 
PACS:  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  78.55.Cr (III-V semiconductors)  
  78.20.Bh (Theory, models, and numerical simulation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006044), the Natural Science Foundation of Beijing, China (Grant Nos. 4122014 and 4142007), and the Fund from the Beijing Municipal Education Committee, China (Grant No. KM200910005001).
Corresponding Authors:  Xie Hong-Yun     E-mail:

Cite this article: 

Jiang Zhi-Yun (江之韵), Xie Hong-Yun (谢红云), Zhang Liang-Hao (张良浩), Zhang Wan-Rong (张万荣), Hu Rui-Xin (胡瑞心), Huo Wen-Juan (霍文娟) Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor 2015 Chin. Phys. B 24 048504

[1] Polleux J, Paszkiewicz L and Billabert A 2004 IEEE Trans. M. T. T. 52 871
[2] Zhang S J, Wang H, Zou X H, Zhang Y L, Lu R G and Liu Y 2014 IEEE Photon. J. 6 5501008
[3] Khan H A and Rezazadeh A 2010 IET Optoelectron. 4 57
[4] Tan S W, Chen W T and Chu M Y 2003 Superlattices and Microstructures 33 209
[5] Kosmas T, Bernard W and Ortwin H 2006 J. Phys. D: Appl. Phys. 39 1805
[6] Beata S, Marek P and Artur B 2011 Central European Journal of Physics 9 1114
[7] Khan H A, Rezazadeh A A, Sohaib S and Tauqeer T 2012 IEEE J. Q. E. 48 576
[8] Zhang Y X, Liao Z Y and Wang W 2009 Chin. Phys. B 18 2393
[9] Pan H, Li Z and Campbell J C 2010 J. Lightwave Technol. 28 1184
[10] Fu Y, Pan H and Li Z IEEE 2011 IEEE J. Q. E. 47 1312
[11] Rouvalis E, Chtioui M and vanDijk F 2012 Opt. Express 20 20090
[12] Xue C L, Li C B, Liu Z, Cheng B W and Wang Q M 2013 Chin. Phys. B 22 118503
[13] Zhang S J, Zou X H, Zhang Y L, Zhang X X and Liu Y 2014 Microwave Opt. Technol. Lett. 56 427
[14] Huo W J, Xie H Y and Liang S 2013 Acta Phys. Sin. 62 228501 (in Chinese)
[15] Fukano H, Takanashi Y and Fujimoto M 1994 IEEE J. Q. E. 30 889-2895
[16] Kim J, Kanakaraju S and Johnson W B 2009 Electron. Lett. 45 649
[1] Bandwidth improvement of high power uni-traveling-carrier photodiodes by reducing the series resistance and capacitance
Li Jin (李进), Xiong Bing (熊兵), Sun Chang-Zheng (孙长征), Luo Yi (罗毅), Wang Jian (王健), Hao Zhi-Biao (郝智彪), Han Yan-Jun (韩彦军), Wang Lai (汪莱), Li Hong-Tao (李洪涛). Chin. Phys. B, 2015, 24(7): 078503.
[2] Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity
Chen Qing-Tao (陈庆涛), Huang Yong-Qing (黄永清), Fei Jia-Rui (费嘉瑞), Duan Xiao-Feng (段晓峰), Liu Kai (刘凯), Liu Feng (刘锋), Kang Chao (康超), Wang Jun-Chu (汪君楚), Fang Wen-Jing (房文敬), Ren Xiao-Min (任晓敏). Chin. Phys. B, 2015, 24(10): 108506.
[3] High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector
Li Chong (李冲), Xue Chun-Lai (薛春来), Li Chuan-Bo (李传波), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明). Chin. Phys. B, 2013, 22(11): 118503.
[4] Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators
Zhang Yun-Xiao(张云霄), Liao Zai-Yi(廖栽宜), Zhao Ling-Juan(赵玲娟), Pan Jiao-Qing(潘教青), Zhu Hong-Liang(朱洪亮), and Wang Wei(王圩). Chin. Phys. B, 2010, 19(7): 074216.
[5] High-performance evanescently-coupled uni-traveling-carrier photodiodes
Zhang Yun-Xiao(张云霄), Liao Zai-Yi(廖栽宜), and Wang Wei(王圩). Chin. Phys. B, 2009, 18(6): 2393-2397.
No Suggested Reading articles found!