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Chin. Phys. B, 2014, Vol. 23(7): 077105    DOI: 10.1088/1674-1056/23/7/077105
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Lü Yuan-Jiea, Feng Zhi-Honga, Lin Zhao-Junb, Guo Hong-Yua, Gu Guo-Donga, Yin Jia-Yuna, Wang Yuan-Ganga, Xu Penga, Song Xu-Boa, Cai Shu-Juna
a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Abstract  Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures (~ 100 K). Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is investigated. The polarization Coulomb field (PCF) scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin AlN barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.
Keywords:  AlN/GaN      electron mobility      polarization Coulomb field scattering      polarization  
Received:  24 October 2013      Revised:  14 January 2014      Accepted manuscript online: 
PACS:  71.55.Eq (III-V semiconductors)  
  72.20.Fr (Low-field transport and mobility; piezoresistance)  
  72.10.-d (Theory of electronic transport; scattering mechanisms)  
  77.22.Ej (Polarization and depolarization)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and 11174182).
Corresponding Authors:  Feng Zhi-Hong     E-mail:  blueledviet@yahoo.com.cn
About author:  71.55.Eq; 72.20.Fr; 72.10.-d; 77.22.Ej

Cite this article: 

Lü Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Guo Hong-Yu, Gu Guo-Dong, Yin Jia-Yun, Wang Yuan-Gang, Xu Peng, Song Xu-Bo, Cai Shu-Jun Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 2014 Chin. Phys. B 23 077105

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