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Chin. Phys. B, 2014, Vol. 23(4): 048502    DOI: 10.1088/1674-1056/23/4/048502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

Yang Bin, Guo Zhi-You, Xie Nan, Zhang Pan-Jun, Li Jing, Li Fang-Zheng, Lin Hong, Zheng Huan, Cai Jin-Xin
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University, Guangzhou 510631, China
Abstract  The advantages of a GaN-AlGaN-InGaN last quantum barrier (LQB) in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombination rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.
Keywords:  GaN-based light-emitting diode      efficiency droop      multilayer barrier      last quantum barrier  
Received:  05 August 2013      Revised:  24 October 2013      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  68.65.Ac (Multilayers)  
  78.66.Fd (III-V semiconductors)  
  78.67.De (Quantum wells)  
Fund: Project supported by the Special Strategic Emerging Industries of Guangdong Province, China (Grant Nos. 2011A081301004 and 2012A080304006).
Corresponding Authors:  Guo Zhi-You     E-mail:  guozy@scnu.edu.cn
About author:  85.60.Jb; 68.65.Ac; 78.66.Fd; 78.67.De

Cite this article: 

Yang Bin, Guo Zhi-You, Xie Nan, Zhang Pan-Jun, Li Jing, Li Fang-Zheng, Lin Hong, Zheng Huan, Cai Jin-Xin A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED 2014 Chin. Phys. B 23 048502

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