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Chin. Phys. B, 2013, Vol. 22(8): 088401    DOI: 10.1088/1674-1056/22/8/088401
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Zhao Bi-Jun, Chen Xin, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Li Dan-Wei, Zhuo Xiang-Jing, Zhang Jun, Yi Han-Xiang, Li Shu-Ti
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Abstract  The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.
Keywords:  metal-organic chemical vapor deposition      GaN-based solar cells      InGaN/GaN multiple quantum wells  
Received:  18 December 2012      Revised:  18 January 2013      Published:  27 June 2013
PACS:  84.60.Jt (Photoelectric conversion)  
  85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018).
Corresponding Authors:  Li Shu-Ti     E-mail:  lishuti@scnu.edu.cn

Cite this article: 

Zhao Bi-Jun, Chen Xin, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Li Dan-Wei, Zhuo Xiang-Jing, Zhang Jun, Yi Han-Xiang, Li Shu-Ti Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content 2013 Chin. Phys. B 22 088401

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