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| Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET |
| Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Zhou Chun-Yu, Wang Guan-Yu, Li Yu-Chen |
| Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract The effect of substrate doping on the flatband and threshold voltages of strained-Si/SiGe p metal-oxide semiconductor field-effect transistor (pMOSFET) has been studied. By physically deriving the models of the flatband and threshold voltages, which have been validated by numerical simulation and experimental data, the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained. The proposed model can provide valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of strained-Si MOSFET.
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Received: 11 April 2012
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85.30.Pq
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(Bipolar transistors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.-z
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(Semiconductor devices)
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| Fund:Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801); the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089); and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008). |
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Corresponding Authors: Wang Bin
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E-mail: wbin0316@126.com
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2013, Vol. 22 
