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Chin. Phys. B, 2013, Vol. 22(2): 028503    DOI: 10.1088/1674-1056/22/2/028503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET

Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Zhou Chun-Yu, Wang Guan-Yu, Li Yu-Chen
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The effect of substrate doping on the flatband and threshold voltages of strained-Si/SiGe p metal-oxide semiconductor field-effect transistor (pMOSFET) has been studied. By physically deriving the models of the flatband and threshold voltages, which have been validated by numerical simulation and experimental data, the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained. The proposed model can provide valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of strained-Si MOSFET.
Keywords:  strained-Si pMOSFET      flatband voltage      threshold voltage      doping  
Received:  11 April 2012      Revised:  11 September 2012      Published:  01 January 2013
PACS:  85.30.Pq (Bipolar transistors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.-z (Semiconductor devices)  
Fund: Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801); the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089); and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).
Corresponding Authors:  Wang Bin     E-mail:  wbin0316@126.com

Cite this article: 

Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Zhou Chun-Yu, Wang Guan-Yu, Li Yu-Chen Effect of substrate doping on the flatband and threshold voltages of strained-Si pMOSFET 2013 Chin. Phys. B 22 028503

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