Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi4Ti3O12/p–Si structures by using the admittance spectroscopy method

doi:10.1088/1674-1056/22/10/108502

Abstract In this study, Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures are fabricated and their interface states (N_ss), the values of series resistance (R_s), and AC electrical conductivity (σ_ac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance-voltage (C–V) and conductance-voltage (G–V) measurements. In addition, the effect of interfacial Bi₄Ti₃O₁₂ (BTO) layer on the performance of the structure is investigated. The voltage-dependent profiles of N_ss and R_s are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that N_ss and R_s, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of N_ss and the reordering and restructuring of N_ss under the effect of temperature. The values of activation energy (E_a), obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the E_a of the metal-ferroelectric-semiconductor (MFS) structure is found to be half that of the metal-semiconductor (MS) structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms (N_A), built-in potential (V_bi), Fermi energy (E_F), image force barrier lowering (ΔΦ_b), and barrier height (Φ_b), are extracted using reverse bias C^-2-V characteristics as a function of temperature.

Keywords: MFS structures Bismuth titanate temperature dependent activation energy AC electrical conductivity

Received: 26 December 2012
Revised: 10 April 2013
Accepted manuscript online:

PACS:	85.30.Hi	(Surface barrier, boundary, and point contact devices)
	85.30.Kk	(Junction diodes)
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

Corresponding Authors: Mert Yíldírím
E-mail: mertyildirim@duzce.edu.tr

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Mert Yíldírím, Perihan Durmuş, Şemsettin Altíndal Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method 2013 Chin. Phys. B 22 108502

[1]	Yang H, Ren Q, Zhang G, Chow Y T, Chan H P and Chu P L 2005 Opt. Laser Technol. 37 259
[2]	Lin X, Guan Q F, Liu Y and Li H B 2010 Chin. Phys. B 19 107701
[3]	Wu Y Y, Wang X H and Li L T 2010 Chin. Phys. B 19 037701
[4]	Jo W, Cho H J, Noh T W, Cho Y S, Kwun S I, Byun Y T and Kim S H 1994 Ferroelectrics 152 139
[5]	Scott J F 1998 Ferroelectrics Rev. 1 1
[6]	Joshi P C, Krupanidhi S B and Mansingh A 1992 J. Appl. Phys. 72 5517
[7]	Fouscova A and Cross L E 1968 J. Appl. Phys. 39 2268
[8]	Simoes A Z, Gonzalez A H M, Riccardi C S, Souza E C, Moura F, Zaghete M A, Longo E and Varela J A 2004 J. Electroceram. 13 65
[9]	Cui C E, Huang P and Xu T X 2006 Acta Phys. Sin. 55 1464 (in Chinese)
[10]	Lue Y G, Liang X L, Tan Y H, Zheng X J, Gong Y Q and He L 2011 Acta Phys. Sin. 60 027701 (in Chinese)
[11]	Shao T Q, Ren T L,Wei C G,Wang X N, Li C X, Liu J S, Liu L T, Zhu J and Li Z J 2003 Integr. Ferroelectr. 57 1241
[12]	Ishiwara H 2004 Top. Appl. Phys. 93 233
[13]	Xu Z, Goux L, Kaczer B, Vander Meeren H, Wouters D J and Grouseneken G 2006 Microelectron. Eng. 83 2564
[14]	BozgeyikMS, Cross J S, Ishiwara H and Shinozaki K 2010 Microelectron. Eng. 87 2173
[15]	M Okuyama and Y Ishibashi 2005 Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications (New York: Springer)
[16]	Wu S Y 1974 IEEE Trans. Electron. Dev. ED-21 499
[17]	Parlaktürk F, Altíndal Ş, Tataroğlu A, Parlak M and Agasiev A A 2008 Microelectron. Eng. 85 81
[18]	Yoon S M, Tokumitsu E and Ishiwara H 2000 IEEE Trans. Electron. Dev. 47 1630
[19]	Gökçen M and Yíldírím M 2012 Chin. Phys. B 21 128502
[20]	Tataroğlu A, Altíndal Ş, Aydemir U and Uslu H 2010 Optoelectron. Adv. Mat. 4 616
[21]	Lin X, Guan Q F, Liu Y and Li H B 2010 Chin. Phys. B 19 107701
[22]	Wu Y Y, Wang X H and Li L T 2010 Chin. Phys. B 19 037701
[23]	Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: Wiley)
[24]	Walter T, Herberholz R, Muller C and Schock HW1996 J. Appl. Phys. 80 4411
[25]	Yíldírím M, Eroğlu A, Altíndal Şand Durmuş P 2011 J. Optoelectron. Adv. M. 13 98
[26]	Chattopadhyay P and Raychaudhuri B 1993 Solid State Electron. 36 605
[27]	Gökçen M, Altuntaş H and Altíndal Ş2008 Optoelectron. Adv. Mat. 2 838
[28]	Dökme İ and Altíndal Ş2011 IEEE Trans. Electron Dev. 58 4042
[29]	Dökme İ, Durmuş P and Altíndal Ş2008 Nucl. Instrum. Method B 266 791
[30]	Altíndal Şand Uslu H 2011 J. Appl. Phys. 109 074503
[31]	Uslu H, Dökme İ, Afadiyeva I M and Altíndal Ş2010 Surf. Interface Anal. 42 807
[32]	Xiao H and Huang S 2010 Mater. Sci. Semicond. Proc. 13 395
[33]	Nicollian E H and Goetzberger A 1967 Bell. System Tech. J. 46 1055
[34]	Bülbül M M, Altíndal Ş, Parlaktürk F and Tataroğlu A 2011 Surf. Interface Anal. 43 1561
[35]	Pakma O, Serin N, Serin T and Altíndal Ş2009 J. Sol-Gel Sci. Technol. 50 28
[36]	Bengi A, Altíndal Ş, Özçelik S, Agaliyeva S T and Mammadov T S 2008 Vacuum 83 276

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Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi4Ti3O12/p–Si structures by using the admittance spectroscopy method

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Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p–Si and Al/Bi₄Ti₃O₁₂/p–Si structures by using the admittance spectroscopy method