High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

doi:10.1088/1674-1056/22/10/107302

Abstract To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm²/V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor (MOS) interface by analyzing the electrical characteristics of HCl-and (NH₄)₂S-passivated samples.

Keywords: Ge MOSFET high-k dielectric mobility

Received: 26 March 2013
Revised: 06 May 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	71.55.Eq	(III-V semiconductors)
	77.55.D-

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2010CB327501), the National Natural Science Foundation of China (Grant No. 61106095), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

Corresponding Authors: Wang Sheng-Kai, Liu Hong-Gang
E-mail: wangshengkai@ime.ac.cn;liuhonggang@ime.ac.cn

Cite this article:

Xue Bai-Qing (薛百清), Wang Sheng-Kai (王盛凯), Han Le (韩乐), Chang Hu-Dong (常虎东), Sun Bing (孙兵), Zhao Wei (赵威), Liu Hong-Gang (刘洪刚) High-mobility germanium p-MOSFETs by using HCl and (NH₄)₂S surface passivation 2013 Chin. Phys. B 22 107302

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High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

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High-mobility germanium p-MOSFETs by using HCl and (NH₄)₂S surface passivation