Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

doi:10.1088/1674-1056/21/1/017805

Abstract Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.

Keywords: Ge multiple quantum wells strain compensated

Received: 23 March 2011
Revised: 15 September 2011
Accepted manuscript online:

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	73.61.Cw	(Elemental semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, 61177038, and 60906035), and the High Technology Research and Development Program of China (Grant No. 2011AA010302).

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Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文), Xue Chun-Lai(薛春来), Zhang Guang-Ze(张广泽), Su Shao-Jian(苏少坚), Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明) Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon 2012 Chin. Phys. B 21 017805

[1]	Soref R and Fellow L 2006 IEEE J. Sel. Top. Quantum Electron. 12 1678
[2]	Xue H Y, Xue C L, Cheng B W, Yu Y D and Wang Q M 2009 Chin. Phys. B 18 2542
[3]	Kang Y M, Liu H D, Morse M, Paniccia M J, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y H, Chen H W, Zaoui W S, Bowers J E, Beling A, McIntosh D C, Zheng X G and Campbell J C 2009 Nature Photonics 3 59
[4]	Assefa S, Xia F N and Vlasov Y A 2010 Nature 464 80
[5]	Hu W X, Cheng B W, Xue C L, Xue H Y, Su S J, Bai A Q, Luo L P, Yu Y D and Wang Q M 2009 Appl. Phys. Lett. 95 092102
[6]	Sun X C, Liu J F, Kimerling L C and Michel J 2009 Opt. Lett. 34 1198
[7]	Liu J F, Sun X C, Aguilera R C, Kimerling L C and Michel J 2010 Opt. Lett. 35 679
[8]	Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H and Wang Q M 2008 Proceedings of the Fifth IEEE International Conference on Group IV Photonics September, Sorrento (Italy) p. 140
[9]	Halbwax M, Bouchier D, Yam V, DÉbarre D, Nguyen L H, Zheng Y, Rosner P, Benamara M, Strunk H P and Clerc C 2005 J. Appl. Phys. 97 064907
[10]	Fidaner O, Okyay A K, Roth J E, Schaevitz R K, Kuo Y H, Saraswat K C, Harris J S and Miller D A B 2007 IEEE Photon. Technol. Lett. 19 1631
[11]	Chaisakul P, Morini D M, Isella G, Chrastina D, Roux X L, Gatti E, Edmond S, Osmond J, Cassan E and Vivien L 2010 Opt. Lett. 35 2913
[12]	Li S M, Song S M, Lü Y B, Wang A F, Wu A L and Zheng W M 2009 Acta Phys. Sin. 58 4936 (in Chinese)
[13]	LeThanh V, Yam V, Meneceur N, Boucaud P, DÉbarre D and Bouchier D 2001 Mater. Phys. Mech. 4 94
[14]	Varga K, Wang L G, Pantelides S T and Zhang Z Y 2004 Surface Science 562 L225
[15]	People R and Bean J C 1985 Appl. Phys. Lett. 47 322
[16]	Shin K W, Kim H W, Kim J, Yang C, Lee S and Yoon E 2010 Thin Solid Films 518 6496
[17]	Hartmann J M, Papon A M, Destefanis V and Billon T 2008 J. Cryst. Growth 310 5287
[18]	Ekins-Daukes N J, Kawaguchi K and Zhang J 2002 Crystal Growth & Design 2 287
[19]	Liu J F, Cannon D D, Wada K, Ishikawa Y, Danielson D T, Jongthammanurak S, Michel J and Kimerling L C 2004 Phys. Rev. B 70 155309
[20]	van de Walle C G 1989 Phys. Rev. B 39 1871
[21]	Haynes J R 1955 Phys. Rev. 98 1866
[22]	Liu J F, Sun X C, Pan D, Wang X X, Kimerling L C, Koch T L and Michel J 2007 Opt. Express 15 11272
[23]	Ishikawa Y, Wada K, Cannon D D, Liu J F, Chiao L H and Kimerling L C 2003 Appl. Phys. Lett. 82 2044

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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

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