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Chin. Phys. B, 2012, Vol. 21(1): 017804    DOI: 10.1088/1674-1056/21/1/017804
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The determination of the x value in doped Hg1-xCdxTe by transmission spectra

Yue Fang-Yu(越方禹)a), Chen Lu(陈璐)b), Li Ya-Wei(李亚巍)a), Sun Lin(孙琳)a), Yang Ping-Xiong(杨平雄)a), and Chu Jun-Hao(褚君浩)a)c)
a Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; b Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract  Variable-temperature transmission/absorption spectra are measured on As-doped Hg1-xCdxTe grown by molecular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on V_textrmHg (unintentionally)-doped HgCdTe. By referring to the empirical formulas of Eg(x, T), the x value of the epilayer is calculated and its inconsistency between the extreme temperatures (e.g. 10 and 300 K) is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value (or Eg) in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible (e.g. 10 K), and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.
Keywords:  intrinsic/extrinsic-doped HgCdTe      bandedge parameters      transmission spectra  
Received:  04 May 2011      Revised:  20 May 2011      Accepted manuscript online: 
PACS:  78.30.Fs (III-V and II-VI semiconductors)  
  78.66.Hf (II-VI semiconductors)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2007CB924901), the Shanghai Leading Academic Discipline Project, China (Grant No. B411), the National Natural Science Foundation of China (Grant Nos. 60906043, 60990312, and 6107

Cite this article: 

Yue Fang-Yu(越方禹), Chen Lu(陈璐), Li Ya-Wei(李亚巍), Sun Lin(孙琳), Yang Ping-Xiong(杨平雄), and Chu Jun-Hao(褚君浩) The determination of the x value in doped Hg1-xCdxTe by transmission spectra 2012 Chin. Phys. B 21 017804

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