Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

doi:10.1088/1674-1056/20/10/107803

Abstract The efficiency of organic light-emitting devices (OLEDs) based on N,N'-bis(1-naphthyl)-N,N'-diphenyl-N,1'-biphenyl-4,4'-diamine (NPB) (the hole transport layer) and tris(8-hydroxyquinoline) aluminum (Alq₃) (both emission and electron transport layers) is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm², which is about 86% higher than that of an ordinary device (without a LiF interlayer, 3.2 cd/A). An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.

Keywords: organic light-emitting devices LiF interlayer efficiency

Received: 04 May 2011
Revised: 02 June 2011
Accepted manuscript online:

PACS:	78.60.Fi	(Electroluminescence)
	73.61.Ng	(Insulators)
	73.61.Ph	(Polymers; organic compounds)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60876046) and the Tianjin Natural Science Foundation of China (Grant No. 10JCYBJC01100).

Cite this article:

Jiao Zhi-Qiang(焦志强), Wu Xiao-Ming(吴晓明), Hua Yu-Lin(华玉林), Dong Mu-Sen(董木森), Su Yue-Ju(苏跃举), Shen Li-Ying(申利莹), and Yin Shou-Gen(印寿根) Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer 2011 Chin. Phys. B 20 107803

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Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

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